Parametric results for: 2SC5197-R under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 1

2 hits Apply

Collector Current-Max (IC) (1)

8 A 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

120 V 1

2 hits Apply

Configuration (1)

SINGLE 1

2 hits Apply

DC Current Gain-Min (hFE) (1)

55.0 1

2 hits Apply

R-PSFM-T3 1

2 hits Apply

Manufacturer (2)

Inchange Semiconductor Company Ltd 1 Toshiba America Electronic Components 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Contact Manufacturer 1 Obsolete 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

NPN 1

2 hits Apply

80 W 1

2 hits Apply

80 W 1

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply

Transition Frequency-Nom (fT) (1)

30 MHz 1

2 hits Apply