Parametric results for: 2SK3312 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

345.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

4 hits Apply

Drain Current-Max (ID) (1)

6 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

1.25 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSIP-T3 1 R-PSSO-G2 1

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 1 3 1

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

IN-LINE 1 SMALL OUTLINE 1

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

65 W 2

4 hits Apply

Surface Mount (2)

NO 2 YES 2

4 hits Apply