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1 - 10 of 278 results
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IPD30N06S4L23ATMA2
Infineon Technologies AG
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$0.4867 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 30 A | 23 mΩ | 18 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | ||||||||||||||
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FQB30N06LTM
Fairchild Semiconductor Corporation
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$0.5200 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 32 A | 45 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 128 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | D2PAK-3 | not_compliant | EAR99 | D2PAK | 2 | 2LD,TO263, SURFACE MOUNT | 8541.29.00.95 | ||||||||
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IAUZ30N06S5L140ATMA1
Infineon Technologies AG
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$0.5618 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 60 V | 1 | 30 A | 19.6 mΩ | 27 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 33 W | 85 A | SILICON | S-PDSO-N8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||||||||||
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IPD30N06S215ATMA1
Infineon Technologies AG
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$0.5659 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 14.7 mΩ | ULTRA LOW RESISTANCE | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 A | SILICON | TO-252 | R-PSSO-G2 | AEC-Q101 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | Infineon | |||||||||||||||||
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IPD30N06S2L-13
Infineon Technologies AG
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$0.5850 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 17 mΩ | LOGIC LEVEL COMPATIBLE | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 136 W | 200 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3 | not_compliant | EAR99 | Infineon | TO-252 | 4 | ||||||||
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IPD30N06S2L13ATMA1
Infineon Technologies AG
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$0.5850 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 17 mΩ | ULTRA LOW RESISTANCE | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 A | SILICON | TO-252 | R-PSSO-G2 | AEC-Q101 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3/2 | compliant | EAR99 | Infineon | |||||||||||||||||
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IPD30N06S2-15
Infineon Technologies AG
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$0.6120 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 14.7 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 136 W | 120 A | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3 | not_compliant | EAR99 | Infineon | TO-252 | 4 | ||||||||||
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IPD30N06S2L13ATMA4
Infineon Technologies AG
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$0.6190 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 17 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 A | SILICON | TO-252 | R-PSSO-G2 | e3 | AEC-Q101 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon | |||||||||||||
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NTMFD030N06CT1G
onsemi
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$0.6430 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 60 V | 2 | 19 A | 29.7 mΩ | 10 mJ | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 23 W | 63 A | SILICON | R-PDSO-F8 | e3 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | ONSEMI | SO-8FL, DFN-8 | compliant | EAR99 | onsemi | 506BT | 2020-01-17 | |||||||||||
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IPD30N06S2L23ATMA3
Infineon Technologies AG
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$0.6899 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 30 A | 30 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 A | SILICON | TO-252 | R-PSSO-G2 | e3 | AEC-Q101 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-252-3-11, 3/2 PIN | not_compliant | EAR99 | Infineon |