Parametric results for: 4N10 under Power Field-Effect Transistors

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Manufacturer Part Number: 4n10
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IAUC24N10S5L300ATMA1
Infineon Technologies AG
$0.6316 Yes Active e3 1 NOT SPECIFIED NOT SPECIFIED Tin (Sn) INFINEON TECHNOLOGIES AG not_compliant EAR99 Infineon
STL4N10F7
STMicroelectronics
$0.6579 Yes Active NOT SPECIFIED NOT SPECIFIED STMICROELECTRONICS compliant EAR99 STMicroelectronics
IXTP44N10T
IXYS Corporation
$0.9584 Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 44 A 30 mΩ AVALANCHE RATED 250 mJ 47 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 110 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) THROUGH-HOLE SINGLE IXYS CORP not_compliant EAR99 TO-220AB TO-220AB, 3 PIN 3
FQP44N10
onsemi
$1.2094 Yes End Of Life N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 43.5 A 39 mΩ FAST SWITCHING 530 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 146 W 174 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE ONSEMI not_compliant EAR99 onsemi TO-220, 3 PIN 340AT
IXTY44N10T
IXYS Corporation
$1.3012 Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 44 A 30 mΩ AVALANCHE RATED 250 mJ 47 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 110 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE IXYS CORP not_compliant EAR99 TO-252AA SMALL OUTLINE, R-PSSO-G2 4
IXTP44N10T
Littelfuse Inc
$1.4132 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 44 A 30 mΩ AVALANCHE RATED 250 mJ 47 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 110 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 175 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) THROUGH-HOLE SINGLE LITTELFUSE INC not_compliant EAR99 LITTELFUSE
FDP054N10
Fairchild Semiconductor Corporation
$1.4444 Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 120 A 5.5 mΩ ULTRA-LOW RESISTANCE 1153 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 263 W 576 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE FAIRCHILD SEMICONDUCTOR CORP compliant EAR99 TO-220 ROHS COMPLIANT PACKAGE-3 3 TO220, MOLDED, 3LD, NON JEDEC VARIATION AB 8541.29.00.95
IXTP1R4N100P
IXYS Corporation
$1.6319 Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1 kV 1 1.4 A 11 Ω AVALANCHE RATED 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 63 W 3 A SWITCHING SILICON TO-220AB R-PSFM-T3 e1 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN SILVER COPPER THROUGH-HOLE SINGLE IXYS CORP compliant EAR99 TO-220AB TO-220, 3 PIN 3
IXTY1R4N100P
IXYS Corporation
$1.7179 Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 kV 1 1.4 A 11 Ω AVALANCHE RATED 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 63 W 3 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE IXYS CORP compliant EAR99 TO-252 SMALL OUTLINE, R-PSSO-G2 3
IXTA1R4N100P
IXYS Corporation
$1.7760 Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 1 kV 1 1.4 A 11 Ω AVALANCHE RATED 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 63 W 3 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE IXYS CORP not_compliant EAR99 D2PAK TO-263, 3 PIN 4