Parametric results for: 4x1N4004 under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (3)

60 ns 2 70 ns 2 80 ns 2

Min (ns) - Max (ns)

6 hits Apply

SEPARATE 6

6 hits Apply

R-PDIP-T18 6

6 hits Apply

e0 6

6 hits Apply

Manufacturer (2)

National Semiconductor Corporation 3 Texas Instruments 3

6 hits Apply

Memory Density (1)

1.0486 Mbit 6

6 hits Apply

FAST PAGE DRAM 6

6 hits Apply

Memory Width (1)

1 6

6 hits Apply

18 6

6 hits Apply

1.0486 M 6

6 hits Apply

1000000.0 6

6 hits Apply

70.0 °C 6

6 hits Apply

0.0 °C 6

6 hits Apply

Organization (1)

1MX1 6

6 hits Apply

3-STATE 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

DIP 6

6 hits Apply

DIP18,.3 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

IN-LINE 6

6 hits Apply

Refresh Cycles (1)

512 6

6 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 6

6 hits Apply