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5962-3829417MXA
Matra MHS
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Check for Price | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | STANDARD SRAM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | DUAL | MATRA MHS | DIP | CERAMIC, DIP-28 | 28 | unknown | 3A001.A.2.C | 8542.32.00.41 | ||||||||||||||||||||||
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5962-3829417MXA
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | OTHER SRAM | COMMON | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 135 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | RENESAS ELECTRONICS CORP | CDIP | CERAMIC, DIP-28 | 28 | not_compliant | 3A001A2C | 8542320041 | CD28 | Renesas Electronics | |||
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5962-3829417MXA
Teledyne e2v
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | STANDARD SRAM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 135 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | TELEDYNE E2V (UK) LTD | DIP | CERAMIC, DIP-28 | 28 | unknown | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||
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5962-3829417MXA
Defense Logistics Agency
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Check for Price | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | OTHER SRAM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | DUAL | DEFENSE LOGISTICS AGENCY | CERAMIC, DIP-28 | unknown | |||||||||||||||||||||||||
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5962-3829417MXA
QP Semiconductor
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Check for Price | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | STANDARD SRAM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | DUAL | QP SEMICONDUCTOR INC | DIP | CERAMIC, DIP-28 | 28 | unknown | 3A001.A.2.C | 8542.32.00.41 | ||||||||||||||||||||||
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5962-3829417MXA
Pyramid Semiconductor Corporation
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Check for Price | No | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | OTHER SRAM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 135 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | PERFORMANCE SEMICONDUCTOR CORP | DIP | CERAMIC, DIP-28 | 28 | unknown | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||
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5962-3829417MXA
Matra Design Semiconductor
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | STANDARD SRAM | COMMON | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 135 µA | CMOS | MILITARY | R-XDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) - hot dipped | THROUGH-HOLE | 2.54 mm | DUAL | MATRA DESIGN SEMICONDUCTOR | DIP-28 | unknown | 3A001.A.2.C | 8542.32.00.41 | ||||||||||||||||||
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5962-3829417MXA
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | OTHER SRAM | COMMON | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 135 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | CERAMIC, DIP-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | CD28 | 1993-01-01 | |||
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5962-3829417MXA
Cypress Semiconductor
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | STANDARD SRAM | COMMON | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 4.5 V | 135 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | CYPRESS SEMICONDUCTOR CORP | DIP | CERAMIC, DIP-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||
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5962-3829417MXA
Temic Semiconductors
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Check for Price | No | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 20 ns | STANDARD SRAM | COMMON | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 mA | 4.5 V | 135 µA | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | TEMIC SEMICONDUCTORS | DIP-28 | unknown |