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5962-8687507XA
Matra Design Semiconductor
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Check for Price | No | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 185 µA | CMOS | MILITARY | R-XDIP-T48 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 48 | CERAMIC | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) - hot dipped | THROUGH-HOLE | 2.54 mm | DUAL | MATRA DESIGN SEMICONDUCTOR | DIP-48 | unknown | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||||||||
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5962-8687507XA
Matra MHS
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Check for Price | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 1 | 1000 | 1.024 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | Not Qualified | e0 | 125 °C | -55 °C | NOT SPECIFIED | MIL-STD-883 Class B (Modified) | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | DIP | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 60.96 mm | 15.24 mm | MATRA MHS | 0.600 INCH, SIDE BRAZED, DIP-48 | unknown | 3A001.A.2.C | 8542.32.00.41 | DIP | 48 | |||||||||||||||||||
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5962-8687507XA
Defense Logistics Agency
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Check for Price | Active | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 1 | 1000 | 1.024 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | Qualified | e0 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | DIP | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 60.96 mm | 15.24 mm | DEFENSE LOGISTICS AGENCY | 0.600 INCH, SIDE BRAZED, DIP-48 | unknown | ||||||||||||||||||||||||
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5962-8687507XA
Temic Semiconductors
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Check for Price | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 1 | 1000 | 1.024 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | Not Qualified | e0 | 125 °C | -55 °C | NOT SPECIFIED | MIL-STD-883 Class B | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | DIP | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 60.96 mm | 15.24 mm | TEMIC SEMICONDUCTORS | 0.600 INCH, SIDE BRAZED, DIP-48 | unknown | |||||||||||||||||||||||
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5962-8687507XA
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 4 mA | 2 V | 185 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T48 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | 38535Q/M;38534H;883B | 48 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 60.96 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | 0.600 INCH, SIDE BRAZED, DIP-48 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | SB | 48 | SB48 | 1990-01-01 | ||||
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5962-8687507XA
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 4 mA | 2 V | 185 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T48 | Qualified | e0 | 1 | 125 °C | -55 °C | 240 | 38535Q/M;38534H;883B | 48 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP48,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 60.96 mm | 15.24 mm | RENESAS ELECTRONICS CORP | 0.600 INCH, SIDE BRAZED, DIP-48 | not_compliant | 3A001A2C | 8542320041 | SB | 48 | SB48 | Renesas Electronics |