Findchips: Parametric Search Results for 5962-8866209NA


Select Parts		Part Number

		5962-8866209NA Minco Technology Labs LLC
		5962-8866209NA QP Semiconductor
		5962-8866209NA Pyramid Semiconductor Corporation
		5962-8866209NA Micross Components
		5962-8866209NA Teledyne e2v

		Most Relevant					Technical															Compliance			Operating Conditions			Physical											Other
Composite Price	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Screening Level	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Transferred

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

MICROSS MINCO LLC

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

Check for Price

Transferred

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

32000

32.768 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

DUAL

QP SEMICONDUCTOR INC

DIP

DIP,

unknown

3A001.A.2.C

8542.32.00.41

Check for Price

Active

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

PYRAMID SEMICONDUCTOR CORP

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

Check for Price

Active

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

MICROSS COMPONENTS

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

Check for Price

Active

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

TELEDYNE E2V (UK) LTD

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

Compare

5962-8866209NA

Minco Technology Labs LLC

Check for Price

Transferred

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

MICROSS MINCO LLC

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

5962-8866209NA

QP Semiconductor

Check for Price

Transferred

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

32000

32.768 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

DUAL

QP SEMICONDUCTOR INC

DIP

DIP,

unknown

3A001.A.2.C

8542.32.00.41

5962-8866209NA

Pyramid Semiconductor Corporation

Check for Price

Active

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

PYRAMID SEMICONDUCTOR CORP

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

5962-8866209NA

Micross Components

Check for Price

Active

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

MICROSS COMPONENTS

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

5962-8866209NA

Teledyne e2v

Check for Price

Active

262.144 kbit

32KX8

5 V

12 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

20 mA

4.5 V

190 µA

5.5 V

4.5 V

CMOS

MILITARY

R-GDIP-T28

Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, GLASS-SEALED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

TELEDYNE E2V (UK) LTD

DIP

DIP, DIP28,.3

compliant

3A001.A.2.C

8542.32.00.41

Parametric results for: 5962-8866209NA under SRAMs