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5962-8866901XX
Temic Semiconductors
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Check for Price | Obsolete | 18.432 kbit | 9 | 2KX9 | 5 V | 80 ns | 10 MHz | 100 ns | OTHER FIFO | 1 | 2000 | 2.048 k | ASYNCHRONOUS | NO | PARALLEL | 25 mA | 150 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | TEMIC SEMICONDUCTORS | CERAMIC, DIP-28 | unknown | ||||||||||||
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5962-8866901XX
QP Semiconductor
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Check for Price | Transferred | 18.432 kbit | 9 | 2KX9 | 5 V | 80 ns | 100 ns | RETRANSMIT | 1 | 2000 | 2.048 k | ASYNCHRONOUS | NO | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | QP SEMICONDUCTOR INC | DIP, | unknown | EAR99 | 8542.32.00.71 | ||||||||||||
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5962-8866901XX
Teledyne e2v
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Check for Price | Active | 18.432 kbit | 9 | 2KX9 | 5 V | 80 ns | 100 ns | OTHER FIFO | RETRANSMIT | 1 | 2000 | 2.048 k | ASYNCHRONOUS | NO | PARALLEL | 150 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | TELEDYNE E2V (UK) LTD | DIP, | compliant | EAR99 | 8542.32.00.71 | ||||||||||
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5962-8866901XX
Matra MHS
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Check for Price | Obsolete | 18.432 kbit | 9 | 2KX9 | 5 V | 80 ns | 100 ns | OTHER FIFO | RETRANSMIT | 1 | 2000 | 2.048 k | ASYNCHRONOUS | NO | PARALLEL | 150 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | MATRA MHS | DIP, | unknown | EAR99 | 8542.32.00.71 | ||||||||||
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5962-8866901XX
Integrated Device Technology Inc
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Check for Price | Obsolete | 18.432 kbit | 9 | 2KX9 | 5 V | 80 ns | 100 ns | OTHER FIFO | RETRANSMIT | 1 | 2000 | 2.048 k | ASYNCHRONOUS | NO | PARALLEL | 150 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP, | unknown | EAR99 | 8542.32.00.71 | DIP | 28 |