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Manufacturer Part Number: 59623829412mza
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5962-3829412MZA
 Defense Logistics Agency 		Check for Price Active 65.536 kbit 8 8KX8 5 V 35 ns OTHER SRAM 1 8000 8.192 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS MILITARY R-CDIP-T28 Qualified e0 125 °C -55 °C MIL-STD-883 28 CERAMIC, METAL-SEALED COFIRED DIP RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 36.449 mm 7.62 mm DEFENSE LOGISTICS AGENCY CERAMIC, DIP-28 unknown
5962-3829412MZA
 LOGIC Devices Inc 		Check for Price No No Obsolete 65.536 kbit 8 8KX8 5 V 35 ns STANDARD SRAM COMMON 1 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 300 µA 2 V 110 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T28 Not Qualified e0 3 125 °C -55 °C 225 MIL-STD-883 28 CERAMIC, METAL-SEALED COFIRED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.06 mm 35.56 mm 7.62 mm LOGIC DEVICES INC 0.300 INCH, CERAMIC, DIP-28 unknown DIP 28 3A001.A.2.C 8542.32.00.41
5962-3829412MZA
 Pyramid Semiconductor Corporation 		Check for Price Active 65.536 kbit 8 8KX8 5 V 35 ns STANDARD SRAM COMMON 1 8000 8.192 k ASYNCHRONOUS 3-STATE PARALLEL 300 µA 2 V 110 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 36.449 mm 7.62 mm PERFORMANCE SEMICONDUCTOR CORP 0.300 INCH, HERMETIC SEALED, CERDIP-28 unknown DIP 28 3A001.A.2.C 8542.32.00.41
5962-3829412MZA
 Integrated Device Technology Inc 		Check for Price No No Transferred 65.536 kbit 8 8KX8 5 V 35 ns OTHER SRAM COMMON 1 1 8000 8.192 k ASYNCHRONOUS 3-STATE YES PARALLEL 300 µA 2 V 110 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T28 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 28 CERAMIC, METAL-SEALED COFIRED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.1475 mm 7.62 mm INTEGRATED DEVICE TECHNOLOGY INC CERAMIC, DIP-28 not_compliant CDIP 28 3A001.A.2.C 8542.32.00.41 SD28 1993-01-01
5962-3829412MZA
 Micross Components 		Check for Price Obsolete 65.536 kbit 8 8KX8 5 V 35 ns STANDARD SRAM COMMON 1 1 8000 8.192 k ASYNCHRONOUS 3-STATE YES PARALLEL 300 µA 2 V 110 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T28 Not Qualified e0 125 °C -55 °C MIL-STD-883 28 CERAMIC, METAL-SEALED COFIRED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.06 mm 35.56 mm 7.62 mm AUSTIN SEMICONDUCTOR INC 0.300 INCH, CERAMIC, DIP-28 unknown DIP 28 3A001.A.2.C 8542.32.00.41
5962-3829412MZA
 Renesas Electronics Corporation 		Check for Price No No Obsolete 65.536 kbit 8 8KX8 5 V 35 ns OTHER SRAM COMMON 1 1 8000 8.192 k ASYNCHRONOUS 3-STATE YES PARALLEL 300 µA 2 V 110 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T28 Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 28 CERAMIC, METAL-SEALED COFIRED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.1475 mm 7.62 mm RENESAS ELECTRONICS CORP CERAMIC, DIP-28 not_compliant CDIP 28 3A001A2C 8542320041 SD28 Renesas Electronics