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6116LA25TPG
Integrated Device Technology Inc
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$3.8857 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 µA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e3 | 1 | 70 °C | 260 | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | PDIP | DIP-24 | 24 | PTG24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | ||||||
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IDT6116LA25TPGG
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e3 | 1 | 70 °C | 24 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.300 INCH, PLASTIC, DIP-24 | 24 | compliant | EAR99 | 8542.32.00.41 | |||||||||||
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IDT6116LA25TPG
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 20 µA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e3 | 70 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP24,.3 | 24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | |||||||
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6116LA25TPGI
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 µA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T24 | Not Qualified | e3 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP-24 | 24 | compliant | EAR99 | 8542.32.00.41 | |||||||||
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IDT6116LA25TPGI
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 V | 75 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T24 | Not Qualified | e3 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP24,.3 | 24 | compliant | EAR99 | 8542.32.00.41 | ||||||||||
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6116LA25TPG8
Integrated Device Technology Inc
|
Check for Price | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | 70 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP24,.3 | compliant | EAR99 | 8542.32.00.41 | ||||||||||||||||||
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6116LA25TPGI8
Integrated Device Technology Inc
|
Check for Price | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T24 | Not Qualified | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP24,.3 | compliant | EAR99 | 8542.32.00.41 | |||||||||||||||||
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6116LA25TPGI
Renesas Electronics Corporation
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Check for Price | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 µA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T24 | Not Qualified | e3 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | RENESAS ELECTRONICS CORP | DIP-24 | compliant | ||||||||||||||
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6116LA25TPG
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 35 mA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | R-PDIP-T24 | e3 | 1 | 70 °C | 260 | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 3.3 mm | 31.75 mm | 7.62 mm | RENESAS ELECTRONICS CORP | PDIP | DIP-24 | 24 | PTG24 | unknown | EAR99 | 8542.32.00.41 | 2020-07-21 | Renesas Electronics |