Parametric results for: 6116sa25 under SRAMs
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6116SA25SOG8
Integrated Device Technology Inc
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$3.2347 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G24 | Not Qualified | e3 | 1 | 70 °C | 260 | 40 | 24 | PLASTIC/EPOXY | SOP | SOP24,.4 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.6416 mm | 15.4178 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOIC | SOP, SOP24,.4 | 24 | PSG24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | ||||||
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6116SA25SOGI8
Integrated Device Technology Inc
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$3.3888 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G24 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 24 | PLASTIC/EPOXY | SOP | SOP24,.4 | RECTANGULAR | SMALL OUTLINE | YES | TIN | GULL WING | 1.27 mm | DUAL | 2.6416 mm | 15.4178 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOIC | SOP, SOP24,.4 | 24 | PSG24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | ||||||
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6116SA25TPG
Integrated Device Technology Inc
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$3.5324 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e3 | 1 | 70 °C | 260 | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | PDIP | DIP-24 | 24 | PTG24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | |||||||
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6116SA25SOG
Integrated Device Technology Inc
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$3.5324 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G24 | Not Qualified | e3 | 1 | 70 °C | 260 | 40 | 24 | PLASTIC/EPOXY | SOP | SOP24,.4 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.6416 mm | 15.4178 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOIC | SOIC-24 | 24 | PSG24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | ||||||
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6116SA25SOGI
Integrated Device Technology Inc
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$3.7006 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G24 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 40 | 24 | PLASTIC/EPOXY | SOP | SOP24,.4 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.6416 mm | 15.4178 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOIC | SOIC-24 | 24 | PSG24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | |||||
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6116SA25TPGI
Integrated Device Technology Inc
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$3.7006 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T24 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 24 | PLASTIC/EPOXY | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.191 mm | 31.75 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | PDIP | DIP, DIP24,.3 | 24 | PTG24 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | ||||||
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6116SA25TDB
Integrated Device Technology Inc
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$13.3339 | No | No | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 135 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T24 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 24 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 32.004 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | DIP, DIP24,.3 | 24 | SD24 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | 1988-01-01 | |||||
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IDT6116SA25L28BG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | S-CQCC-N28 | Not Qualified | e3 | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | SQUARE | CHIP CARRIER | YES | MATTE TIN | NO LEAD | 1.27 mm | QUAD | 2.54 mm | 11.4554 mm | 11.4554 mm | INTEGRATED DEVICE TECHNOLOGY INC | QLCC | LCC-28 | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||||
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6116SA25Y
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | STANDARD SRAM | COMMON | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J24 | Not Qualified | e0 | 3 | 70 °C | 225 | 30 | 24 | PLASTIC/EPOXY | SOJ | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | SOJ | 0.300 INCH, SOJ-24 | 24 | not_compliant | EAR99 | 8542.32.00.41 | ||||||||||||
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6116SA25YI
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | APPLICATION SPECIFIC SRAM | COMMON | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 4.5 V | 120 µA | CMOS | INDUSTRIAL | R-PDSO-J24 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 30 | 24 | PLASTIC/EPOXY | SOJ | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn85Pb15) | J BEND | 1.27 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 |