Parametric results for: 70 ma pnp si sm signal tr... under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 4.7 2 BUILT IN BIAS RESISTOR RATIO 4.7 1 BUILT-IN BIAS RESISTOR 4 BUILT-IN BIAS RESISTOR RATIO 0.47 2 BUILT-IN BIAS RESISTOR RATIO 4.7 3 BUILT-IN BIAS RESISTOR RATIO IS 0.468 10 BUILT-IN BIAS RESISTOR RATIO IS 0.47 4 BUILT-IN BIAS RESISTOR RATIO IS 1 22 BUILT-IN BIAS RESISTOR RATIO IS 2.12 8 BUILT-IN BIAS RESISTOR RATIO IS 4.7 34 DIGITAL, BUILT IN BIAS RESISTOR 5 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.2 6 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.21 2 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.212 1 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.12 4 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 30

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COLLECTOR 5

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Collector Current-Max (IC) (1)

70 mA 237

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2.5 pF 3

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Collector-Emitter Voltage-Max (5)

30 V 11 50 V 122 160 V 41 200 V 18 300 V 9

Min (V) - Max (V)

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Configuration (3)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 23 SINGLE 68 SINGLE WITH BUILT-IN RESISTOR 115

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DC Current Gain-Min (hFE) (10)

30.0 11 33.0 25 50.0 21 60.0 11 68.0 87 70.0 27 100.0 27 120.0 9 140.0 9 200.0 9

Min - Max

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TO-226 8 TO-92 39

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O-PBCY-T3 60 O-PBCY-W3 4 R-PDSO-F3 2 R-PDSO-F6 3 R-PDSO-G3 82 R-PDSO-G6 20 R-PSIP-T3 31 R-PSSO-G2 1 R-XBCC-N3 3

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e0 18 e1 12 e2 5 e3 29 e3/e2 1 e6 1

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Manufacturer (16)

Diodes Incorporated 18 Freescale Semiconductor 1 Galaxy Microelectronics 1 Galaxy Semi-Conductor Co Ltd 1 Infineon Technologies AG 41 LRC Leshan Radio Co Ltd 1 onsemi 7 Panasonic Electronic Components 27 Rochester Electronics LLC 1 ROHM Semiconductor 77 SANYO Electric Co Ltd 17 SANYO Semiconductor Co Ltd 17 Siemens 15 Tak Cheong Electronics (Holdings) Co Ltd 1 Unisonic Technologies Co Ltd 11 Yangzhou Yangjie Electronics Co Ltd 1

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1 36 NOT SPECIFIED 1

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Number of Elements (2)

1 211 2 26

Min - Max

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Number of Terminals (3)

2 1 3 182 6 23

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135.0 °C 1 150.0 °C 104

Min (°C) - Max (°C)

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-55.0 °C 1

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PLASTIC/EPOXY 203 UNSPECIFIED 3

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RECTANGULAR 142 ROUND 64

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CHIP CARRIER 3 CYLINDRICAL 64 IN-LINE 31 SMALL OUTLINE 108

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Active 53 Contact Manufacturer 1 End Of Life 8 Not Recommended 2 Obsolete 137 Transferred 36

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No 8 Yes 29

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235 1 260 29 NOT SPECIFIED 45

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Polarity/Channel Type (1)

PNP 237

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200 mW 17 250 mW 9 300 mW 2 600 mW 3

Min (W) - Max (W)

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150 mW 13 200 mW 24 250 mW 30 300 mW 11 600 mW 9 750 mW 5 900 mW 4 1 W 14

Min (W) - Max (W)

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Surface Mount (2)

NO 95 YES 142

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Transition Frequency-Nom (fT) (7)

30 MHz 3 50 MHz 12 80 MHz 12 150 MHz 57 190 MHz 22 200 MHz 4 250 MHz 68

Min (MHz) - Max (MHz)

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