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70T3519S166BCI8
Integrated Device Technology Inc
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$145.4418 | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | 256 | BC256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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70T3519S166BCI
Integrated Device Technology Inc
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$176.1058 | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256 | 256 | BC256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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70T3519S166BCI
Renesas Electronics Corporation
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Check for Price | No | No | Active | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | RENESAS ELECTRONICS CORP | CABGA | 256 | BC256 | not_compliant | NLR | 8542320041 | Renesas Electronics | |||
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IDT70T3519S166BCI8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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70T3519S166BCI8
Renesas Electronics Corporation
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Check for Price | No | No | End Of Life | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | RENESAS ELECTRONICS CORP | CABGA | 256 | BC256 | not_compliant | NLR | 8542320041 | Renesas Electronics | |||
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IDT70T3519S166BCI
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 12 ns | 166 MHz | MULTI-PORT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | COMMON | 1 | 2 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 510 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B256 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 256 | PLASTIC/EPOXY | LBGA | BGA256,16X16,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Lead (Sn63Pb37) | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 17 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | LBGA, BGA256,16X16,40 | 256 | not_compliant | 3A991.B.2.A | 8542.32.00.41 |