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70T633S12BFGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 2.5 V | 12 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 395 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B208 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 208 | PLASTIC/EPOXY | BGA | BGA208,17X17,32 | SQUARE | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | CABGA | FBGA-208 | 208 | BFG208 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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70T633S12BFGI8
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Obsolete | 9.4372 Mbit | 18 | 512KX18 | 2.5 V | 12 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 395 µA | 2.6 V | 2.4 V | CMOS | INDUSTRIAL | S-PBGA-B208 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 208 | PLASTIC/EPOXY | BGA | BGA208,17X17,32 | SQUARE | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | RENESAS ELECTRONICS CORP | CABGA | 208 | BFG208 | compliant | NLR | 8542320041 | Renesas Electronics | |||
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IDT70T633S12BFGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 18 | 512KX18 | 12 ns | MULTI-PORT SRAM | COMMON | 2 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.4 V | 395 µA | CMOS | INDUSTRIAL | S-PBGA-B208 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 208 | PLASTIC/EPOXY | FBGA | BGA208,17X17,32 | SQUARE | GRID ARRAY, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | FBGA, BGA208,17X17,32 | compliant | 3A991.B.2.A | 8542.32.00.41 |