Findchips: Parametric Search Results for 7164l25

Parametric results for: 7164l25 under SRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		IDT7164L25L32B8 Integrated Device Technology Inc
		7164L25TDGB8 Integrated Device Technology Inc
		7164L25YGB8 Integrated Device Technology Inc
		IDT7164L25PGI Integrated Device Technology Inc
		7164L25PG Integrated Device Technology Inc
		7164L25DB Integrated Device Technology Inc
		IDT7164L25L32 Integrated Device Technology Inc
		IDT7164L25PG Integrated Device Technology Inc
		IDT7164L25P Integrated Device Technology Inc
		IDT7164L25TCB Integrated Device Technology Inc

				Most Relevant					Technical																	Compliance			Operating Conditions						Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Ports	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Output Enable	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Screening Level	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code	Manufacturer Package Code	Date Of Intro

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

200 µA

2 V

160 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CQCC-N32

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

NO LEAD

1.27 mm

QUAD

3.048 mm

13.97 mm

11.43 mm

INTEGRATED DEVICE TECHNOLOGY INC

QFJ

LCC-32

not_compliant

3A001.A.2.C

8542.32.00.41

Check for Price

Yes

Transferred

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

Not Qualified

125 °C

-55 °C

260

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.1475 mm

7.62 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP,

compliant

3A001.A.2.C

8542.32.00.41

Check for Price

Yes

Transferred

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-PDSO-J28

Not Qualified

125 °C

-55 °C

260

MIL-STD-883 Class B

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

YES

Matte Tin (Sn)

J BEND

1.27 mm

DUAL

3.556 mm

17.9324 mm

7.5184 mm

INTEGRATED DEVICE TECHNOLOGY INC

SOJ

SOJ,

compliant

3A001.A.2.C

8542.32.00.41

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

60 µA

2 V

80 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-PDIP-T28

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

4.699 mm

36.576 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

unknown

EAR99

8542.32.00.41

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

60 µA

2 V

150 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T28

Not Qualified

70 °C

260

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

compliant

EAR99

8542.32.00.41

Check for Price

Transferred

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

200 µA

2 V

160 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

Not Qualified

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

INTEGRATED DEVICE TECHNOLOGY INC

CDIP

DIP-28

not_compliant

3A001.A.2.C

8542.32.00.41

CD28

1988-01-01

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

60 µA

2 V

150 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-CQCC-N32

Not Qualified

70 °C

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

NO LEAD

1.27 mm

QUAD

3.048 mm

13.97 mm

11.43 mm

INTEGRATED DEVICE TECHNOLOGY INC

QFJ

LCC-32

not_compliant

EAR99

8542.32.00.41

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

60 µA

2 V

80 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T28

Not Qualified

70 °C

260

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

4.699 mm

36.576 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

unknown

EAR99

8542.32.00.41

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

60 µA

2 V

150 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T28

Not Qualified

70 °C

240

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

4.699 mm

36.576 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

not_compliant

EAR99

8542.32.00.41

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

200 µA

2 V

160 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

35.56 mm

7.62 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.300 INCH, THIN, SIDE BRAZED, DIP-28

not_compliant

3A001.A.2.C

8542.32.00.41

1 2 3 4 5 Next

Compare

IDT7164L25L32B8

Integrated Device Technology Inc

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

200 µA

2 V

160 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CQCC-N32

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

NO LEAD

1.27 mm

QUAD

3.048 mm

13.97 mm

11.43 mm

INTEGRATED DEVICE TECHNOLOGY INC

QFJ

LCC-32

not_compliant

3A001.A.2.C

8542.32.00.41

7164L25TDGB8

Integrated Device Technology Inc

Check for Price

Yes

Transferred

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

Not Qualified

125 °C

-55 °C

260

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

37.1475 mm

7.62 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

DIP,

compliant

3A001.A.2.C

8542.32.00.41

7164L25YGB8

Integrated Device Technology Inc

Check for Price

Yes

Transferred

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-PDSO-J28

Not Qualified

125 °C

-55 °C

260

MIL-STD-883 Class B

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

YES

Matte Tin (Sn)

J BEND

1.27 mm

DUAL

3.556 mm

17.9324 mm

7.5184 mm

INTEGRATED DEVICE TECHNOLOGY INC

SOJ

SOJ,

compliant

3A001.A.2.C

8542.32.00.41

IDT7164L25PGI

Integrated Device Technology Inc

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

60 µA

2 V

80 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-PDIP-T28

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

4.699 mm

36.576 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

unknown

EAR99

8542.32.00.41

7164L25PG

Integrated Device Technology Inc

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

60 µA

2 V

150 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T28

Not Qualified

70 °C

260

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

compliant

EAR99

8542.32.00.41

7164L25DB

Integrated Device Technology Inc

Check for Price

Transferred

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

200 µA

2 V

160 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

Not Qualified

125 °C

-55 °C

240

MIL-STD-883 Class B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

INTEGRATED DEVICE TECHNOLOGY INC

CDIP

DIP-28

not_compliant

3A001.A.2.C

8542.32.00.41

CD28

1988-01-01

IDT7164L25L32

Integrated Device Technology Inc

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

60 µA

2 V

150 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-CQCC-N32

Not Qualified

70 °C

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

NO LEAD

1.27 mm

QUAD

3.048 mm

13.97 mm

11.43 mm

INTEGRATED DEVICE TECHNOLOGY INC

QFJ

LCC-32

not_compliant

EAR99

8542.32.00.41

IDT7164L25PG

Integrated Device Technology Inc

Check for Price

Yes

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

60 µA

2 V

80 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T28

Not Qualified

70 °C

260

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

4.699 mm

36.576 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

unknown

EAR99

8542.32.00.41

IDT7164L25P

Integrated Device Technology Inc

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

60 µA

2 V

150 µA

5.5 V

4.5 V

CMOS

COMMERCIAL

R-PDIP-T28

Not Qualified

70 °C

240

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

4.699 mm

36.576 mm

15.24 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.600 INCH, PLASTIC, DIP-28

not_compliant

EAR99

8542.32.00.41

IDT7164L25TCB

Integrated Device Technology Inc

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

25 ns

STANDARD SRAM

COMMON

8000

8.192 k

ASYNCHRONOUS

3-STATE

YES

PARALLEL

200 µA

2 V

160 µA

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T28

Not Qualified

125 °C

-55 °C

38535Q/M;38534H;883B

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

35.56 mm

7.62 mm

INTEGRATED DEVICE TECHNOLOGY INC

DIP

0.300 INCH, THIN, SIDE BRAZED, DIP-28

not_compliant

3A001.A.2.C

8542.32.00.41

1 2 3 4 5 Next