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71T75902S75PFGI
Renesas Electronics Corporation
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$49.1664 | Yes | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 75 ns | 100 MHz | ZBT SRAM | COMMON | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | PARALLEL | 60 mA | 2.375 V | 295 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PQFP-G100 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | RENESAS ELECTRONICS CORP | TQFP | 100 | PKG100 | compliant | NLR | 8542320041 | Renesas Electronics | ||||||
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71T7590285PFI
Integrated Device Technology Inc
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Check for Price | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | 2020-03-30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71T75902S75PFG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.38 V | 275 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 14 X 20 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, MO-136DJ, TQFP-100 | ||||||
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71T75902S75PFI
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 295 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 100 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | LQFP, QFP100,.63X.87 | ||||||||
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IDT71T75902S80BGI8
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 270 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 14 X 22 MM, PLASTIC, BGA-119 | ||||||||
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71T75902S75PFGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 7.5 ns | ZBT SRAM | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PQFP-G100 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | TQFP-100 | |||||||||||||||
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71T7590280BG
Integrated Device Technology Inc
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Check for Price | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | 2020-03-30 | , | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71T75902S85PF
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.38 V | 225 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 100 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | LQFP, QFP100,.63X.87 | |||||||||
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IDT71T75902S85BG8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 8.5 ns | 90 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.38 V | 225 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | BGA, BGA119,7X17,50 | ||||||||
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IDT71T75902S80PFG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 8 ns | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | LQFP, |