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71V67903S75BG8
Integrated Device Technology Inc
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$14.0191 | No | No | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 20 MM, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71V67903S75BG8
Renesas Electronics Corporation
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Check for Price | No | No | End Of Life | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | RENESAS ELECTRONICS CORP | PBGA | 119 | BG119 | not_compliant | NLR | 8542320041 | Renesas Electronics | ||||
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IDT71V67903S75BG8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1999-12-31 |