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71T75602S100BG8
Integrated Device Technology Inc
|
$21.6878 | No | No | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.38 V | 175 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, MS-028-AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71T75602S100BGG8
Integrated Device Technology Inc
|
$21.6878 | Yes | Yes | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.38 V | 175 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71T75602S100BGI8
Integrated Device Technology Inc
|
$22.6446 | No | No | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 195 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, MS-028-AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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71T75602S100BGGI8
Integrated Device Technology Inc
|
$22.6446 | Yes | Yes | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 195 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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71T75602S100BG
Integrated Device Technology Inc
|
$25.5289 | No | No | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.38 V | 175 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, MS-028AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71T75602S100BGG
Integrated Device Technology Inc
|
$27.2035 | Yes | Yes | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 2.38 V | 175 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, GREEN, MS-028AA, BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71T75602S100BGI
Integrated Device Technology Inc
|
$28.4036 | No | No | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 195 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, MS-028AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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71T75602S100BGGI
Integrated Device Technology Inc
|
$28.4036 | Yes | Yes | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 195 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, GREEN, MS-028AA, BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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IDT71T75602S100BGI
Integrated Device Technology Inc
|
Check for Price | No | No | Transferred | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 195 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71T75602S100BGGI8
Renesas Electronics Corporation
|
Check for Price | Yes | Yes | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 5 ns | 100 MHz | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 2.38 V | 195 µA | 2.625 V | 2.375 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | RENESAS ELECTRONICS CORP | PBGA | 119 | BGG119 | compliant | NLR | 8542320041 | Renesas Electronics |