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71V65703S75BG8
Integrated Device Technology Inc
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$14.0191 | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 275 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V65703S75BGG8
Integrated Device Technology Inc
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$15.4145 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | ZBT SRAM | FLOW-THROUGH | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||||
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71V65703S75BG
Integrated Device Technology Inc
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$16.4212 | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 275 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V65703S75BGG
Integrated Device Technology Inc
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$19.6218 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | ZBT SRAM | FLOW-THROUGH | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||||
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71V65703S75BG
Renesas Electronics Corporation
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$31.1731 | No | No | Active | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 275 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | RENESAS ELECTRONICS CORP | PBGA | 119 | BG119 | not_compliant | NLR | 8542320041 | Renesas Electronics | |||||
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IDT71V65703S75BG8
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 275 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1999-12-31 | |||||
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IDT71V65703S75BG
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 275 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1999-12-31 | |||||
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71V65703S75BG8
Renesas Electronics Corporation
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Check for Price | No | No | End Of Life | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 100 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 275 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | RENESAS ELECTRONICS CORP | PBGA | 119 | BG119 | not_compliant | NLR | 8542320041 | Renesas Electronics | |||||
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71V65703S75BGGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | ZBT SRAM | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | X-PBGA-B119 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | UNSPECIFIED | GRID ARRAY | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | BOTTOM | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, | 119 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||||||
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71V65703S75BGG8
Renesas Electronics Corporation
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Check for Price | Yes | Yes | End Of Life | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | ZBT SRAM | FLOW-THROUGH | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | BOTTOM | RENESAS ELECTRONICS CORP | PBGA | 119 | BGG119 | compliant | NLR | 8542320041 | Renesas Electronics |