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71V67703S75BG8
Integrated Device Technology Inc
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$14.0191 | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 20 MM, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V67703S75BGG8
Integrated Device Technology Inc
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$15.4145 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 22 MM, PLASTIC, BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V67703S75BGGI8
Integrated Device Technology Inc
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$16.9533 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 3.14 V | 285 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71V67703S75BGG
Integrated Device Technology Inc
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$17.2265 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 20 MM, BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V67703S75BG
Integrated Device Technology Inc
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$17.8456 | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 20 MM, 1.27 MM PITCH, BGA-119 | 119 | BG119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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71V67703S75BGGI
Integrated Device Technology Inc
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$18.9462 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 3.14 V | 285 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | PBGA | 14 X 20 MM, BGA-119 | 119 | BGG119 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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71V67703S75BG8
Renesas Electronics Corporation
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Check for Price | No | No | End Of Life | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | RENESAS ELECTRONICS CORP | PBGA | 119 | BG119 | not_compliant | NLR | 8542320041 | Renesas Electronics | |||||
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IDT71V67703S75BG
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 1999-12-31 | |||||
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71V67703S75BGG8
Renesas Electronics Corporation
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Check for Price | Yes | Yes | End Of Life | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 50 mA | 3.14 V | 265 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | RENESAS ELECTRONICS CORP | PBGA | 119 | BGG119 | compliant | NLR | 8542320041 | Renesas Electronics | |||||
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71V67703S75BGI
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 7.5 ns | 117 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 3.14 V | 285 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn63Pb37) | BALL | 1.27 mm | BOTTOM | 2.36 mm | 22 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | BGA, BGA119,7X17,50 | 119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 |