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7200L30TDB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 2.304 kbit | 9 | 256X9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 256 | 256 words | ASYNCHRONOUS | NO | PARALLEL | 900 µA | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | CDIP | CERAMIC, DIP-28 | 28 | SD28 | not_compliant | EAR99 | 8542.32.00.71 | 1988-01-01 | ||||
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7200L30TDB
Renesas Electronics Corporation
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Check for Price | No | No | Obsolete | 2.304 kbit | 9 | 256X9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 256 | 256 words | ASYNCHRONOUS | NO | PARALLEL | 900 µA | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 240 | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | RENESAS ELECTRONICS CORP | CDIP | CERAMIC, DIP-28 | 28 | SD28 | not_compliant | NLR | 8542320071 | Renesas Electronics | ||||
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IDT7200L30TDB
Integrated Device Technology Inc
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Check for Price | No | No | Transferred | 2.304 kbit | 9 | 256X9 | 5 V | 30 ns | 25 MHz | 40 ns | OTHER FIFO | RETRANSMIT | 1 | 256 | 256 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 900 µA | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP28,.3 | 28 | not_compliant | EAR99 | 8542.32.00.71 | 1988-01-01 |