Findchips: Parametric Search Results for 85C82I%2FP


Select Parts		Part Number

		85C82I/P Microchip Technology Inc
		85C82-I/P Microchip Technology Inc
		85C82I/J Microchip Technology Inc
		85C82-I/J Microchip Technology Inc
		85C82-I/SM Microchip Technology Inc
		85C82I/SM Microchip Technology Inc
		85C82-I/SN Microchip Technology Inc

				Most Relevant						Technical																			Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Power Supplies	Clock Frequency-Max (fCLK)	Memory IC Type	Additional Feature	Data Retention Time-Min	Endurance	I2C Control Byte	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Serial Bus Type	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Write Cycle Time-Max (tWC)	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Active

2.048 kbit

256X8

5 V

100 kHz

EEPROM

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

MICROCHIP TECHNOLOGY INC

DIP

0.300 INCH, PLASTIC, DIP-8

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Active

2.048 kbit

256X8

5 V

100 kHz

EEPROM

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDIP-T8

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

4.32 mm

9.46 mm

7.62 mm

MICROCHIP TECHNOLOGY INC

DIP

0.300 INCH, PLASTIC, DIP-8

compliant

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

3-STATE

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-GDIP-T8

Not Qualified

85 °C

-40 °C

CERAMIC, GLASS-SEALED

DIP

DIP8,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

9.8425 mm

7.62 mm

MICROCHIP TECHNOLOGY INC

DIP

0.300 INCH, CERDIP-8

unknown

EAR99

8542.32.00.51

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-GDIP-T8

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

CERAMIC, GLASS-SEALED

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

MICROCHIP TECHNOLOGY INC

DIP

DIP, DIP8,.3

unknown

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDSO-G8

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

YES

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

2.03 mm

5.28 mm

5.207 mm

MICROCHIP TECHNOLOGY INC

SOIC

SOP, SOP8,.3

unknown

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDSO-G8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

YES

TIN LEAD

GULL WING

1.27 mm

DUAL

MICROCHIP TECHNOLOGY INC

SOIC

0.207 INCH, PLASTIC, SOIC-8

unknown

EAR99

8542.32.00.51

Check for Price

Yes

Active

2.048 kbit

256X8

5 V

100 kHz

EEPROM

AUTOMATIC WRITE; 2 WIRE INTERFACE

100000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

8.5 µA

5.5 V

4 V

CMOS

INDUSTRIAL

1 ms

R-PDSO-G8

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

YES

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

1.75 mm

4.9 mm

3.9 mm

MICROCHIP TECHNOLOGY INC

SOIC

0.150 INCH, PLASTIC, SOIC-8

compliant

EAR99

8542.32.00.51

Compare

85C82I/P

Microchip Technology Inc

Check for Price

Yes

Active

2.048 kbit

256X8

5 V

100 kHz

EEPROM

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

MICROCHIP TECHNOLOGY INC

DIP

0.300 INCH, PLASTIC, DIP-8

compliant

EAR99

8542.32.00.51

85C82-I/P

Microchip Technology Inc

Check for Price

Yes

Active

2.048 kbit

256X8

5 V

100 kHz

EEPROM

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDIP-T8

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

4.32 mm

9.46 mm

7.62 mm

MICROCHIP TECHNOLOGY INC

DIP

0.300 INCH, PLASTIC, DIP-8

compliant

85C82I/J

Microchip Technology Inc

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

3-STATE

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-GDIP-T8

Not Qualified

85 °C

-40 °C

CERAMIC, GLASS-SEALED

DIP

DIP8,.3

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

9.8425 mm

7.62 mm

MICROCHIP TECHNOLOGY INC

DIP

0.300 INCH, CERDIP-8

unknown

EAR99

8542.32.00.51

85C82-I/J

Microchip Technology Inc

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-GDIP-T8

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

CERAMIC, GLASS-SEALED

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

MICROCHIP TECHNOLOGY INC

DIP

DIP, DIP8,.3

unknown

85C82-I/SM

Microchip Technology Inc

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDSO-G8

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

YES

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

2.03 mm

5.28 mm

5.207 mm

MICROCHIP TECHNOLOGY INC

SOIC

SOP, SOP8,.3

unknown

85C82I/SM

Microchip Technology Inc

Check for Price

Obsolete

2.048 kbit

256X8

5 V

100 kHz

EEPROM

200

1000000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

4.5 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

1 ms

R-PDSO-G8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

YES

TIN LEAD

GULL WING

1.27 mm

DUAL

MICROCHIP TECHNOLOGY INC

SOIC

0.207 INCH, PLASTIC, SOIC-8

unknown

EAR99

8542.32.00.51

85C82-I/SN

Microchip Technology Inc

Check for Price

Yes

Active

2.048 kbit

256X8

5 V

100 kHz

EEPROM

AUTOMATIC WRITE; 2 WIRE INTERFACE

100000 Write/Erase Cycles

1010DDDR

256

256 words

SYNCHRONOUS

OPEN-DRAIN

SERIAL

I2C

100 µA

8.5 µA

5.5 V

4 V

CMOS

INDUSTRIAL

1 ms

R-PDSO-G8

Not Qualified

85 °C

-40 °C

260

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

YES

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

1.75 mm

4.9 mm

3.9 mm

MICROCHIP TECHNOLOGY INC

SOIC

0.150 INCH, PLASTIC, SOIC-8

compliant

EAR99

8542.32.00.51

Parametric results for: 85C82I%2FP under EEPROMs