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93AA66AT-I/OT
Microchip Technology Inc
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$0.2682 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 3 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G6 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 6 | PLASTIC/EPOXY | LSSOP | TSOP5/6,.11,37 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 950 µm | DUAL | 1.45 mm | 2.95 mm | 1.63 mm | MICROCHIP TECHNOLOGY INC | SOT-23 | LEAD FREE, PLASTIC, SC-74A, SOT-23, 6 PIN | 6 | compliant | Microchip | ||||
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93AA66A-I/SN
Microchip Technology Inc
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$0.2983 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | |||
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93AA66A-I/P
Microchip Technology Inc
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$0.3054 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP | 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | |||||
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93AA66AX-I/SN
Microchip Technology Inc
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$0.3689 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | ||
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93AA66A-I/MS
Microchip Technology Inc
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$0.4167 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | ROHS COMPLIANT, PLASTIC, MSOP-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | ||
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93AA66AT-I/SN
Microchip Technology Inc
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$0.4185 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | ||
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93AA66AXT-I/SN
Microchip Technology Inc
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$0.4185 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | ||
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93AA66AT-I/MNY
Microchip Technology Inc
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$0.4700 | Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-N8 | e4 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 800 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | DFN | 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | ||||
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93AA66A-I/ST
Microchip Technology Inc
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$0.4700 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 | ||
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93AA66AT-I/ST
Microchip Technology Inc
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$0.4700 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 2.5 V | 1 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 | 8 | compliant | Microchip | EAR99 | 8542.32.00.51 |