Parametric results for: 93C66-I/SM under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Power Supplies Supply Voltage-Nom (Vsup)

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS 2

4 hits Apply

16 4

4 hits Apply

Clock Frequency-Max (fCLK) (1)

2 MHz 4

4 hits Apply

40 2

4 hits Apply

1000000.0 Write/Erase Cycles 2

4 hits Apply

R-PDSO-G8 4

4 hits Apply

e0 4

4 hits Apply

5.28 mm 2

4 hits Apply

Manufacturer (2)

Microchip Technology Inc 2 Rochester Electronics LLC 2

4 hits Apply

Memory Density (1)

4.096 kbit 4

4 hits Apply

EEPROM 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

1.0 4

4 hits Apply

8 4

4 hits Apply

512 words 4

4 hits Apply

512.0 4

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

85.0 °C 4

4 hits Apply

-40.0 °C 4

4 hits Apply

Organization (1)

512X8 4

4 hits Apply

3-STATE 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

SOP 4

4 hits Apply

SOP8,.3 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Power Supplies (1)

5 V 1

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply