Parametric results for: 93LC66X-I/SN under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS 1

4 hits Apply

8 3 16 1

Min - Max

4 hits Apply

Clock Frequency-Max (fCLK) (2)

1 MHz 1 2 MHz 3

Min (MHz) - Max (MHz)

4 hits Apply

200 2

4 hits Apply

1000000.0 Write/Erase Cycles 2

4 hits Apply

R-PDSO-G8 4

4 hits Apply

e3 4

4 hits Apply

4.9 mm 4

4 hits Apply

Manufacturer (2)

Microchip Technology Inc 2 Rochester Electronics LLC 2

4 hits Apply

Memory Density (1)

4.096 kbit 4

4 hits Apply

EEPROM 4

4 hits Apply

Memory Width (2)

8 1 16 3

Min - Max

4 hits Apply

1 4

4 hits Apply

1.0 4

4 hits Apply

1 2

4 hits Apply

8 4

4 hits Apply

256 words 3 512 words 1

Min (words) - Max (words)

4 hits Apply

256.0 3 512.0 1

Min - Max

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

85.0 °C 4

4 hits Apply

-40.0 °C 4

4 hits Apply

Organization (2)

256X16 3 512X8 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

SOP 4

4 hits Apply

SOP8,.23 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (2)

3 V 3 5 V 1

Min (V) - Max (V)

4 hits Apply