Parametric results for: AFM06P2 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

ISOLATED 1 SOURCE 4

8 hits Apply

Configuration (1)

SINGLE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

6 V 8

8 hits Apply

Drain Current-Max (ID) (1)

270 mA 5

8 hits Apply

METAL SEMICONDUCTOR 8

8 hits Apply

Highest Frequency Band (1)

KA BAND 8

8 hits Apply

O-CRDB-F4 4 R-XUUC-N2 3

8 hits Apply

e0 3

8 hits Apply

Manufacturer (2)

Alpha Industries 4 Skyworks Solutions Inc 4

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (2)

2 3 4 4

8 hits Apply

DEPLETION MODE 8

8 hits Apply

175.0 °C 4

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 4 UNSPECIFIED 3

8 hits Apply

RECTANGULAR 3 ROUND 4

8 hits Apply

DISK BUTTON 4 UNCASED CHIP 3

8 hits Apply

Obsolete 4 Transferred 4

8 hits Apply

No 1

8 hits Apply

NOT SPECIFIED 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

1.1 W 3

8 hits Apply

Surface Mount (1)

YES 7

8 hits Apply