Parametric results for: AM29F800BB-55FE under Flash Memories

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Manufacturer Part Number: am29f800bb55fe
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AM29F800BB-55FE
Cypress Semiconductor
Check for Price No Active 8.3886 Mbit 16K,8K,32K,64K 512KX16 5 V 5 V 55 ns FLASH 8 BOTTOM YES YES 1000000 Write/Erase Cycles 1,2,1,15 512000 524.288 k PARALLEL YES YES 1 mA 60 µA CMOS MILITARY YES NOR TYPE R-PDSO-G48 Not Qualified 125 °C -55 °C 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES GULL WING 500 µm DUAL CYPRESS SEMICONDUCTOR CORP compliant
AM29F800BB-55FE
Spansion
Check for Price No No Obsolete 8.3886 Mbit 16 16K,8K,32K,64K 512KX16 5 V 55 ns FLASH BOTTOM BOOT BLOCK 8 BOTTOM YES YES 1000000 Write/Erase Cycles 1 1,2,1,15 512000 524.288 k ASYNCHRONOUS PARALLEL 5 V YES YES 1 mA 60 µA 5.5 V 4.5 V CMOS MILITARY YES NOR TYPE R-PDSO-G48 Not Qualified e0 3 125 °C -55 °C 260 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm SPANSION INC not_compliant TSOP1 REVERSE, MO-142DD, TSOP-48 48 3A001.A.2.C 8542.32.00.51
AM29F800BB-55FE
AMD
Check for Price No Transferred 8.3886 Mbit 16 16K,8K,32K,64K 512KX16 5 V 55 ns FLASH MINIMUM 1,000,000 PROGRAM/ERASE CYCLES PER SECTOR; 20-YEAR DATA RETENTION 8 BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,15 512000 524.288 k ASYNCHRONOUS PARALLEL 5 V YES YES 5 µA 60 µA 5.5 V 4.5 V CMOS MILITARY YES NOR TYPE R-PDSO-G48 Not Qualified e0 125 °C -55 °C 48 PLASTIC/EPOXY TSOP1-R TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm ADVANCED MICRO DEVICES INC unknown TSOP1 TSOP1-R, TSSOP48,.8,20 48 3A001.A.2.C 8542.32.00.51