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AS28C010CW-12/Q
Micross Components
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Check for Price | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 120 ns | EEPROM | 100 YEAR DATA RETENTION | 100 | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | MILITARY | 10 ms | R-CDIP-T32 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 | 32 | CERAMIC, METAL-SEALED COFIRED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 15.24 mm | MICROSS COMPONENTS | DIP | DIP, | 32 | compliant | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||||
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AS28C010CW-12/883C
Micross Components
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Check for Price | No | No | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 120 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 128 words | PARALLEL | 5 V | 500 µA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | 10 ms | R-GDIP-T32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, GLASS-SEALED | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.72 mm | 42.2 mm | 15.24 mm | MICROSS COMPONENTS | DIP | 0.600 INCH, CERAMIC, DIP-32 | 32 | compliant | 3A001.A.2.C | 8542.32.00.51 | ||||
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AS28C010CW-12/XT
Micross Components
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Check for Price | No | No | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 120 ns | EEPROM | 100 YEAR DATA RETENTION | NO | YES | 100 | 10000 Write/Erase Cycles | 1 | 128000 | 131.072 k | SYNCHRONOUS | 128 words | PARALLEL | 5 V | 500 µA | 100 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | 10 ms | R-CDIP-T32 | Not Qualified | e0 | 125 °C | -55 °C | 32 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 42.2 mm | 15.24 mm | MICROSS COMPONENTS | DIP | DIP, DIP32,.6 | 32 | compliant | 3A001.A.2.C | 8542.32.00.51 | |||
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AS28C010CW-12/IT
Micross Components
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Check for Price | No | No | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 120 ns | EEPROM | 100 YEAR DATA RETENTION | NO | YES | 100 | 10000 Write/Erase Cycles | 1 | 128000 | 131.072 k | SYNCHRONOUS | 128 words | PARALLEL | 5 V | 500 µA | 100 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-CDIP-T32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 42.2 mm | 15.24 mm | MICROSS COMPONENTS | DIP | DIP, DIP32,.6 | 32 | compliant | EAR99 | 8542.32.00.51 |