Parametric results for: AS4C4M16SA-6BAN under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 2

2 hits Apply

Access Time-Max (1)

5.4 ns 2

2 hits Apply

AUTO REFRESH/SELF REFRESH 1

2 hits Apply

Clock Frequency-Max (fCLK) (1)

166 MHz 2

2 hits Apply

COMMON 2

2 hits Apply

1,2,4,8 2

2 hits Apply

S-PBGA-B54 2

2 hits Apply

e1 2

2 hits Apply

8 mm 2

2 hits Apply

Manufacturer (1)

Alliance Memory Inc 2

2 hits Apply

Memory Density (1)

67.1089 Mbit 2

2 hits Apply

SYNCHRONOUS DRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

3 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

54 2

2 hits Apply

4.1943 M 2

2 hits Apply

4000000.0 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

105.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

4MX16 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TFBGA 2

2 hits Apply

BGA54,9X9,32 2

2 hits Apply

SQUARE 2

2 hits Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 2

2 hits Apply

Refresh Cycles (1)

4096 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply