Parametric results for: AS4C4M4E1Q50JC under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 1

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Access Time-Max (1)

50 ns 1

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RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

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COMMON 1

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R-PDSO-J28 1

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e0 1

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18.54 mm 1

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Manufacturer (1)

Alliance Semiconductor Corporation 1

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Memory Density (1)

16.7772 Mbit 1

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EDO DRAM 1

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Memory Width (1)

4 1

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1.0 1

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1 1

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28 1

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4.1943 M 1

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4000000.0 1

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ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

4MX4 1

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3-STATE 1

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PLASTIC/EPOXY 1

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SOJ 1

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SOJ28,.34 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Refresh Cycles (1)

2048 1

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Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply