Parametric results for: AT25XE161D-MAHN-T under Flash Memories

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

108 MHz 2

2 hits Apply

20 2

2 hits Apply

100000.0 Write/Erase Cycles 2

2 hits Apply

R-PDSO-N8 2

2 hits Apply

3 mm 2

2 hits Apply

Manufacturer (2)

Dialog Semiconductor GmbH 1 Renesas Electronics Corporation 1

2 hits Apply

Memory Density (1)

16.7772 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1 1

2 hits Apply

1.0 2

2 hits Apply

8 2

2 hits Apply

2.0972 M 2

2 hits Apply

2000000.0 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

2MX8 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

HVSON 2

2 hits Apply

SOLCC8,.12,20 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 2

2 hits Apply