Parametric results for: AT25XE321D-MHN-T under Flash Memories

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY 2

2 hits Apply

Clock Frequency-Max (fCLK) (1)

133 MHz 2

2 hits Apply

20 2

2 hits Apply

100000.0 Write/Erase Cycles 2

2 hits Apply

R-PDSO-N8 2

2 hits Apply

e4 2

2 hits Apply

6 mm 2

2 hits Apply

Manufacturer (2)

Dialog Semiconductor GmbH 1 Renesas Electronics Corporation 1

2 hits Apply

Memory Density (1)

33.5544 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1 2

2 hits Apply

1.0 2

2 hits Apply

8 2

2 hits Apply

4.1943 M 2

2 hits Apply

4000000.0 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

4MX8 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

HVSON 2

2 hits Apply

SOLCC8,.25 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply