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AM28F512A-150PC
AMD
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Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 150 ns | FLASH | 100K WRITE/ERASE CYCLES MIN | YES | YES | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | NOR TYPE | R-PDIP-T32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | ADVANCED MICRO DEVICES INC | DIP | DIP, DIP32,.6 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||
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AM28F512-200LIB
AMD
|
Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 200 ns | FLASH | BULK ERASE | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-CQCC-N32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 2.54 mm | 13.97 mm | 11.43 mm | ADVANCED MICRO DEVICES INC | QFJ | QCCN, LCC32,.45X.55 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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AM28F512-200FI
Spansion
|
Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 200 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | YES | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PDSO-G32 | Not Qualified | 1 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP2 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.05 mm | 18.4 mm | 8 mm | SPANSION INC | TSOP2 | TSOP2-32 | 32 | compliant | EAR99 | 8542.32.00.51 | ||||||||
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AM28F512-250EEB
AMD
|
Check for Price | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 250 ns | FLASH | 10K WRITE/ERASE CYCLES MIN | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 5.5 V | 4.5 V | CMOS | MILITARY | NOR TYPE | R-PDSO-G32 | Not Qualified | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | ADVANCED MICRO DEVICES INC | TSOP | TSOP-32 | 32 | unknown | 3A001.A.2.C | 8542.32.00.51 | ||||||||||||||||
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AM28F512-90FE
AMD
|
Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | BULK ERASE | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | YES | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | MILITARY | NO | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | TSOP1-R | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | ADVANCED MICRO DEVICES INC | TSOP | REVERSE, TSOP-32 | 32 | unknown | 3A001.A.2.C | 8542.32.00.51 | ||||
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AM28F512-95EIB
AMD
|
Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | BULK ERASE | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 100 µA | 30 µA | 5.25 V | 4.75 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | ADVANCED MICRO DEVICES INC | TSOP | 8 X 20 MM, 1.20 MM HEIGHT, TSOP-32 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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AM28F512-90C4PC
AMD
|
Check for Price | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 90 ns | FLASH | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 42.164 mm | 15.24 mm | ADVANCED MICRO DEVICES INC | DIP | PLASTIC, DIP-32 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||||
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AM28F512-200JC
Cypress Semiconductor
|
Check for Price | No | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 5 V | 200 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 64000 | 65.536 k | PARALLEL | 100 µA | 30 µA | CMOS | COMMERCIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | CYPRESS SEMICONDUCTOR CORP | compliant | |||||||||||||||||||||||
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AM28F512-120PC
Spansion
|
Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 120 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 1 | 64000 | 65.536 k | ASYNCHRONOUS | PARALLEL | 12 V | 100 µA | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | NOR TYPE | R-PDIP-T32 | Not Qualified | 1 | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.7 mm | 42 mm | 15.24 mm | SPANSION INC | DIP | DIP, DIP32,.6 | 32 | compliant | EAR99 | 8542.32.00.51 | ||||||||||
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AM28F512-120PI
Cypress Semiconductor
|
Check for Price | No | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 5 V | 120 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 64000 | 65.536 k | PARALLEL | 100 µA | 30 µA | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PDIP-T32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | CYPRESS SEMICONDUCTOR CORP | compliant |