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1 - 8 of 8 results
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BAR61E6327HTSA1
Infineon Technologies AG
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$0.6701 | Yes | Yes | Obsolete | 0.5 pF | 250 mW | SILICON | 100 V | PIN DIODE | COMPLEX | YES | 3 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | HIGH FREQUENCY | 1000 ns | Not Qualified | R-PDSO-G4 | e3 | 1 | 150 °C | ANODE AND CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G4 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||
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BAR61
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | 0.5 pF | 0.35 pF | 250 mW | 12 Ω | SILICON | 100 V | PIN DIODE | COMPLEX | YES | 3 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | 10 µA | 100 MHz | HIGH FREQUENCY | 1000 ns | Not Qualified | R-PDSO-G4 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | ROHS COMPLIANT PACKAGE-4 | compliant | EAR99 | 8541.10.00.80 | 4 | ||||||
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BAR61E6327
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | 0.5 pF | 250 mW | SILICON | PIN DIODE | COMPLEX | YES | 3 | ATTENUATOR; SWITCHING | HIGH FREQUENCY | 1000 ns | COMMERCIAL | R-PDSO-G4 | e3 | NOT SPECIFIED | 260 | 40 | ANODE AND CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ROCHESTER ELECTRONICS INC | R-PDSO-G4 | unknown | |||||||||||||||
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BAR61E6433
Siemens
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Check for Price | Transferred | 0.5 pF | 250 mW | SILICON | PIN DIODE | COMPLEX | YES | 3 | ATTENUATOR; SWITCHING | HIGH FREQUENCY | 1000 ns | Not Qualified | R-PDSO-G4 | ANODE AND CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||||||
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BAR61E6327
Siemens
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Check for Price | Transferred | 0.5 pF | 250 mW | SILICON | PIN DIODE | COMPLEX | YES | 3 | ATTENUATOR; SWITCHING | HIGH FREQUENCY | 1000 ns | Not Qualified | R-PDSO-G4 | ANODE AND CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||||||
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BAR61
Siemens
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Check for Price | No | Transferred | 0.5 pF | 0.35 pF | 7 Ω | SILICON | 100 V | PIN DIODE | COMPLEX | YES | 3 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | 10 µA | 100 MHz | 4 µs | 50 V | Not Qualified | R-PDSO-G4 | e0 | 150 °C | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | 8541.10.00.80 | |||||||||||||
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BAR61E6433
Infineon Technologies AG
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Check for Price | Yes | Obsolete | 0.5 pF | 0.2 pF | 250 mW | 4.2 kΩ | SILICON | 100 V | PIN DIODE | COMPLEX | YES | 3 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 10 µA | 100 MHz | HIGH FREQUENCY | 1000 ns | Not Qualified | R-PDSO-G4 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ANODE AND CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.10.00.80 | |||||||||||
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BAR61E6327
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | 0.5 pF | 0.2 pF | 250 mW | 4.2 kΩ | SILICON | 100 V | PIN DIODE | COMPLEX | YES | 3 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 10 µA | 100 MHz | HIGH FREQUENCY | 1000 ns | Not Qualified | R-PDSO-G4 | e3 | 1 | 150 °C | 260 | ANODE AND CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 8541.10.00.80 | Infineon |