Parametric results for: BAS116LT1G under Rectifier Diodes
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BAS116LT1G
onsemi
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$0.0353 | Yes | Active | 200 mA | 900 mV | 3 µs | 225 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | 500 mA | 1 | Not Qualified | R-PDSO-G3 | e3 | TO-236 | 1 | 150 °C | -55 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8541.10.00.70 | onsemi | |||||
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SBAS116LT1G
onsemi
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$0.0643 | Yes | Active | 200 mA | 900 mV | 3 µs | 225 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | 500 mA | 1 | R-PDSO-G3 | e3 | AEC-Q101 | TO-236 | 1 | 150 °C | -55 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318-08 | compliant | EAR99 | 8541.10.00.70 | onsemi | |||||
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LBAS116LT1G
LRC Leshan Radio Co Ltd
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Check for Price | Yes | Active | 215 mA | 900 mV | 3 µs | 150 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 85 V | 1 | 500 mA | 1 | R-PDSO-G3 | 150 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | LESHAN RADIO CO LTD | R-PDSO-G3 | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||
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S-LBAS116LT1G
LRC Leshan Radio Co Ltd
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Check for Price | Yes | Active | 215 mA | 900 mV | 3 ns | 150 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 85 V | 1 | HIGH RELIABILITY | 4 A | 1 | R-PDSO-G3 | AEC-Q101 | 150 °C | -65 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | LESHAN RADIO CO LTD | R-PDSO-G3 | unknown | EAR99 | 8541.10.00.70 |