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BAS283-GS08
Vishay Intertechnologies
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$0.0490 | Yes | Active | 30 mA | 330 mV | SILICON | RECTIFIER DIODE | SINGLE | YES | 60 V | 1 | SCHOTTKY | 500 mA | 1 | Not Qualified | O-LELF-R2 | e2 | DO-213AA | 1 | 125 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN SILVER | WRAP AROUND | END | VISHAY INTERTECHNOLOGY INC | compliant | Vishay | |||||||||||||||||
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BAS286-GS08
Vishay Intertechnologies
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$0.0572 | Yes | Active | 200 mA | 300 mV | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | SCHOTTKY | 5 A | 1 | Not Qualified | O-LELF-R2 | e2 | DO-213AA | 1 | 125 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN SILVER | WRAP AROUND | END | VISHAY INTERTECHNOLOGY INC | compliant | Vishay | |||||||||||||||||
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BAS28,235
Nexperia
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$0.0758 | Yes | Active | 215 mA | 4 ns | 250 mW | SILICON | RECTIFIER DIODE | SEPARATE, 2 ELEMENTS | YES | 85 V | 2 | R-PDSO-G4 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | 260 | 30 | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | compliant | Nexperia | SOT-143 | 4 | SOT143B | EAR99 | 8541.10.00.70 | 1991-04-01 | |||||||||||||||
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BAS28WH6327XTSA1
Infineon Technologies AG
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$0.0824 | Yes | End Of Life | 715 mV | 4 ns | 50 µA | 250 mW | SILICON | RECTIFIER DIODE | YES | 85 V | 75 V | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | Infineon | EAR99 | |||||||||||||||||||||||||||
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BAS28,215
Nexperia
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$0.1060 | Yes | Active | 215 mA | 4 ns | 250 mW | SILICON | RECTIFIER DIODE | SEPARATE, 2 ELEMENTS | YES | 85 V | 2 | R-PDSO-G4 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | 260 | 30 | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | compliant | Nexperia | SOT-143 | 4 | SOT143B | EAR99 | 8541.10.00.70 | 1991-04-01 | |||||||||||||||
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BAS28Q-13
Diodes Incorporated
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$0.1099 | Yes | Active | 215 mA | 4 ns | 250 mW | SILICON | RECTIFIER DIODE | SEPARATE, 2 ELEMENTS | YES | 85 V | 2 | HIGH RELIABILITY | R-PDSO-G4 | e3 | AEC-Q101 | 1 | -65 °C | 260 | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | Diodes Incorporated | EAR99 | 8541.10.00.70 | |||||||||||||||||||
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BAS28E6327HTSA1
Infineon Technologies AG
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$0.1114 | Yes | Yes | End Of Life | 200 mA | 715 mV | 4 ns | 50 µA | 330 mW | SILICON | RECTIFIER DIODE | SEPARATE, 2 ELEMENTS | YES | 80 V | 2 | 75 V | Not Qualified | R-PDSO-G4 | e3 | 1 | 150 °C | -55 °C | 260 | NOT SPECIFIED | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | Infineon | SOT-143 | 4 | EAR99 | 8541.10.00.70 | R-PDSO-G4 | |||||||||||
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BAS28,235
NXP Semiconductors
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$0.1115 | Yes | Transferred | 215 mA | 1.25 V | 4 ns | 1 µA | 250 mW | SILICON | RECTIFIER DIODE | SEPARATE, 2 ELEMENTS | YES | 85 V | 2 | 4 A | 75 V | Not Qualified | R-PDSO-G4 | e3 | CECC50001-074 | 1 | 150 °C | -65 °C | 260 | 30 | CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NXP SEMICONDUCTORS | compliant | SOT-143 | 4 | SOT143B | EAR99 | 8541.10.00.70 | PLASTIC PACKAGE-4 | |||||||||
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BAS285-GS18
Vishay Intertechnologies
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$0.1183 | Yes | Active | 200 mA | 240 mV | SILICON | RECTIFIER DIODE | SINGLE | YES | 30 V | 1 | SCHOTTKY | 5 A | 1 | Not Qualified | O-LELF-R2 | e2 | DO-213AA | 1 | 125 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN SILVER | WRAP AROUND | END | VISHAY INTERTECHNOLOGY INC | compliant | Vishay | |||||||||||||||||
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BAS285-GS08
Vishay Semiconductors
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$0.1267 | Yes | Obsolete | 200 mA | SILICON | RECTIFIER DIODE | SINGLE | YES | 30 V | 1 | SCHOTTKY | Not Qualified | O-LELF-R2 | DO-213AA | 125 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VISHAY TELEFUNKEN | unknown | Vishay | MELF | 2 | EAR99 | 8541.10.00.70 | GLASS, QUADROMELF-2 |