Parametric results for: BAV102 _R1 _10001 under Signal Diodes
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BAV102
Luguang Electronic Technology Co Ltd
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$0.0208 | Active | MINIMELF | MINIMELF | ||||||||||||||||||||||||||||||||||||||||||||
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BAV102-GS08
Vishay Intertechnologies
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$0.0260 | Yes | Active | 250 mA | 1 V | 50 ns | 15 µA | 500 mW | SILICON | 200 V | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | HIGH VOLTAGE | 1 A | 1 | 150 V | Not Qualified | O-LELF-R2 | e2 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Silver (Sn97.5Ag2.5) | WRAP AROUND | END | VISHAY INTERTECHNOLOGY INC | SOD-80, MELF-2 | compliant | Vishay | ||||||||||
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BAV102
onsemi
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$0.0333 | Yes | Active | 200 mA | 1 V | 50 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 4 A | 1 | Not Qualified | O-LELF-R2 | e3 | 1 | 200 °C | -65 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Matte Tin (Sn) - annealed | WRAP AROUND | END | 100AD | ONSEMI | GLASS, LL-34, 2 PIN | compliant | onsemi | EAR99 | 8541.10.00.70 | ||||||||||
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BAV102
Diotec Semiconductor AG
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$0.0408 | Yes | Active | 200 mA | 1.25 V | 50 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | 500 mA | 1 | Not Qualified | O-PELF-R2 | e1 | DO-213AA | 1 | 175 °C | -50 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Tin/Silver/Copper (Sn/Ag/Cu) | WRAP AROUND | END | DO-213AA | DIOTEC SEMICONDUCTOR AG | ROHS COMPLIANT, PLASTIC, MINIMELF-2 | compliant | Diotec | EAR99 | 8541.10.00.70 | 2 | |||||||||
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BAV102
Fairchild Semiconductor Corporation
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$0.0779 | Yes | Yes | Transferred | 200 mA | 1 V | 50 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 4 A | 1 | Not Qualified | O-LELF-R2 | e3 | 1 | 200 °C | -65 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WRAP AROUND | END | SOD-80 | 2 TERMINAL,SOD-80,JEDEC DO-213AC, MINI-MELF | FAIRCHILD SEMICONDUCTOR CORP | GLASS, LL-34, 2 PIN | compliant | EAR99 | 8541.10.00.80 | 2 | ||||||||
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BAV102-GS18
Vishay Semiconductors
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$0.0799 | Yes | Active | 250 mA | 1 V | 50 ns | 15 µA | 500 mW | SILICON | 200 V | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | HIGH VOLTAGE | 1 A | 1 | 150 V | Not Qualified | O-LELF-R2 | e2 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Silver (Sn97.5Ag2.5) | WRAP AROUND | END | DO-213AA | VISHAY SEMICONDUCTORS | O-LELF-R2 | unknown | Vishay | EAR99 | 8541.10.00.70 | 2 | ||||||
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BAV102-GS08
Vishay Semiconductors
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$0.0799 | Obsolete | 250 mA | 50 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | Not Qualified | O-LELF-R2 | DO-213AA | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VISHAY TELEFUNKEN | GLASS, MINIMELF-2 | unknown | Vishay | ||||||||||||||||||||||
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BAV102,115
NXP Semiconductors
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$0.1187 | Yes | Transferred | 250 mA | 1.25 V | 50 ns | 100 nA | 400 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | 5 A | 1 | Not Qualified | O-LELF-R2 | e3 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | MELF | SOD80C | NXP SEMICONDUCTORS | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.80 | 2 | |||||||||
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BAV102-TP
Micro Commercial Components
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$0.1537 | Yes | Yes | Obsolete | 200 mA | 1 V | 50 ns | 100 nA | 400 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | 1 A | 1 | Not Qualified | O-LELF-R2 | e3 | 1 | 260 | 10 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Matte Tin (Sn) | WRAP AROUND | END | MELF | MICRO COMMERCIAL COMPONENTS | MELF-2 | unknown | EAR99 | 8541.10.00.70 | 2 | ||||||||||
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BAV102T/R7
PanJit Semiconductor
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Check for Price | Yes | Yes | Active | 200 mA | 1 V | 75 ns | 300 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 200 V | 1 | 1 A | Not Qualified | O-LELF-R2 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MELF | PAN JIT INTERNATIONAL INC | O-LELF-R2 | compliant | 2 |