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1 - 10 of 11 results
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BYT52A
Telefunken Microelectronics Gmbh
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Check for Price | No | Transferred | 1 A | 1.3 V | 200 ns | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 1 | e0 | 175 °C | Tin/Lead (Sn/Pb) | TELEFUNKEN MICROELECTRONICS GMBH | unknown | EAR99 | |||||||||||||||||||||||||||||
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BYT52A(Z)
Galaxy Semi-Conductor Co Ltd
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Check for Price | Yes | Contact Manufacturer | 1.4 A | 1.3 V | 200 ns | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 50 A | 1 | 150 °C | 260 | GALAXY SEMI-CONDUCTOR CO LTD | unknown | EAR99 | |||||||||||||||||||||||||||||
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BYT52A(Z)
Galaxy Microelectronics
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Check for Price | Yes | Contact Manufacturer | 1.4 A | 1.3 V | 200 ns | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 50 A | 1 | 150 °C | 260 | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | unknown | EAR99 | |||||||||||||||||||||||||||||
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BYT52A-TAP
Vishay Intertechnologies
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Check for Price | Yes | Active | 850 mA | 1.3 V | 200 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | 50 A | 1 | Not Qualified | E-LALF-W2 | e2 | 1 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | compliant | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | Vishay | ||||||||||||
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BYT52A-TAP
Vishay Semiconductors
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Check for Price | Yes | Active | 850 mA | 1.3 V | 200 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | 50 A | 1 | Not Qualified | E-LALF-W2 | e2 | 1 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY SEMICONDUCTORS | unknown | EAR99 | E-LALF-W2 | Vishay | 2 | 8541.10.00.80 | |||||||||
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BYT52A
Vishay Semiconductors
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Check for Price | Yes | Obsolete | 850 mA | 200 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | Not Qualified | E-LALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | VISHAY TELEFUNKEN | unknown | EAR99 | E-LALF-W2 | 2 | 8541.10.00.80 | |||||||||||||||||||
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BYT52A
EIC Semiconductor Inc
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Check for Price | Yes | Yes | Active | 850 mA | 1.3 V | 200 ns | 10 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | HIGH RELIABILITY | EFFICIENCY | 50 A | 1 | 50 V | O-PALF-W2 | TS-16949 | DO-41 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | EIC SEMICONDUCTOR CO LTD | compliant | EAR99 | 8541.10.00.80 | ||||||||||
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BYT52A
Temic Semiconductors
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Check for Price | Transferred | 850 mA | 200 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | Not Qualified | O-LALF-W2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | TEMIC SEMICONDUCTORS | unknown | |||||||||||||||||||||||||
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BYT52A-TR
Vishay Semiconductors
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Check for Price | Yes | Active | 850 mA | 1.3 V | 200 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | 50 A | 1 | Not Qualified | E-LALF-W2 | e2 | 1 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY SEMICONDUCTORS | unknown | EAR99 | E-LALF-W2 | Vishay | 2 | 8541.10.00.80 | |||||||||
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BYT52A-TR
Vishay Intertechnologies
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Check for Price | Yes | Active | 850 mA | 1.3 V | 200 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | 50 A | 1 | Not Qualified | E-LALF-W2 | e2 | 1 | 175 °C | -55 °C | 260 | 30 | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | Tin/Silver (Sn96.5Ag3.5) | WIRE | AXIAL | VISHAY INTERTECHNOLOGY INC | compliant | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | Vishay |