Findchips: Parametric Search Results for BYV28150

Parametric results for: BYV28150 under Rectifier Diodes

Select parts from the table below to compare.

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Select Parts		Part Number

		SBYV28-150-E3/73 Vishay Intertechnologies
		BYV28-150-TR Vishay Intertechnologies
		BYV28-150-TAP Vishay Intertechnologies
		BYV28-150/50113 NXP Semiconductors
		BYV28-150 Galaxy Semi-Conductor Co Ltd
		BYV28-150/21113 NXP Semiconductors
		BYV28-150Z Galaxy Semi-Conductor Co Ltd
		BYV28-150-TR Vishay Semiconductors
		BYV28-150 Microchip Technology Inc
		BYV28-150AMO Philips Semiconductors

				Most Relevant											Technical					Compliance				Operating Conditions					Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Forward Voltage-Max (VF)	Reverse Recovery Time-Max	Reverse Current-Max	Diode Element Material	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Technology	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	Reverse Test Voltage	Qualification Status	JESD-30 Code	JESD-609 Code	JEDEC-95 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	Samacsys Manufacturer	ECCN Code	HTS Code	Pin Count

$0.2484

Yes

Active

3.5 A

1.1 V

20 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

LOW LEAKAGE CURRENT, FREE WHEELING DIODE

EFFICIENCY

90 A

Not Qualified

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WIRE

AXIAL

VISHAY INTERTECHNOLOGY INC

ROHS COMPLIANT, PLASTIC PACKAGE-2

compliant

Vishay

$0.6464

Yes

Active

3.5 A

890 mV

30 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

90 A

Not Qualified

E-LALF-W2

175 °C

-55 °C

260

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN SILVER

WIRE

AXIAL

VISHAY INTERTECHNOLOGY INC

HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

compliant

Vishay

$0.6487

Yes

Active

3.5 A

890 mV

30 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

90 A

Not Qualified

E-LALF-W2

175 °C

-55 °C

260

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

Tin/Silver (Sn/Ag)

WIRE

AXIAL

VISHAY INTERTECHNOLOGY INC

HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

compliant

Vishay

Check for Price

Obsolete

3.5 A

1.02 V

25 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

ULTRA FAST RECOVERY

90 A

Not Qualified

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

NXP SEMICONDUCTORS

O-LALF-W2

unknown

EAR99

8541.10.00.80

Check for Price

Active

3.5 A

1.02 V

35 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

SUPER FAST RECOVERY

90 A

150 V

O-PALF-W2

DO-27

125 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

WIRE

AXIAL

GALAXY SEMI-CONDUCTOR CO LTD

unknown

EAR99

8541.10.00.80

Check for Price

Obsolete

3.5 A

1.02 V

25 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

ULTRA FAST RECOVERY

90 A

Not Qualified

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

NXP SEMICONDUCTORS

O-LALF-W2

unknown

EAR99

8541.10.00.80

Check for Price

Yes

Active

3.5 A

1.02 V

25 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

SUPER FAST RECOVERY

90 A

O-PALF-W2

DO-27

150 °C

-55 °C

260

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

WIRE

AXIAL

GALAXY SEMI-CONDUCTOR CO LTD

O-PALF-W2

unknown

EAR99

8541.10.00.80

Check for Price

Yes

Active

3.5 A

890 mV

30 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

90 A

Not Qualified

E-LALF-W2

175 °C

-55 °C

260

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN SILVER

WIRE

AXIAL

VISHAY SEMICONDUCTORS

E-LALF-W2

unknown

Vishay

EAR99

8541.10.00.80

Check for Price

Active

3.5 A

1.1 V

30 ns

1 µA

SILICON

RECTIFIER DIODE

SINGLE

EFFICIENCY

80 A

Not Qualified

O-LALF-W2

165 °C

-55 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

Check for Price

Transferred

1.9 A

1.1 V

30 ns

RECTIFIER DIODE

SINGLE

150 V

GENERAL PURPOSE

90 A

175 °C

Tin/Lead (Sn80Pb20)

PHILIPS SEMICONDUCTORS

unknown

EAR99

1 2 3 4 5 Next

Compare

SBYV28-150-E3/73

Vishay Intertechnologies

$0.2484

Yes

Active

3.5 A

1.1 V

20 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

LOW LEAKAGE CURRENT, FREE WHEELING DIODE

EFFICIENCY

90 A

Not Qualified

O-PALF-W2

DO-201AD

150 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

MATTE TIN

WIRE

AXIAL

VISHAY INTERTECHNOLOGY INC

ROHS COMPLIANT, PLASTIC PACKAGE-2

compliant

Vishay

BYV28-150-TR

Vishay Intertechnologies

$0.6464

Yes

Active

3.5 A

890 mV

30 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

90 A

Not Qualified

E-LALF-W2

175 °C

-55 °C

260

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN SILVER

WIRE

AXIAL

VISHAY INTERTECHNOLOGY INC

HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

compliant

Vishay

BYV28-150-TAP

Vishay Intertechnologies

$0.6487

Yes

Active

3.5 A

890 mV

30 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

90 A

Not Qualified

E-LALF-W2

175 °C

-55 °C

260

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

Tin/Silver (Sn/Ag)

WIRE

AXIAL

VISHAY INTERTECHNOLOGY INC

HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

compliant

Vishay

BYV28-150/50113

NXP Semiconductors

Check for Price

Obsolete

3.5 A

1.02 V

25 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

ULTRA FAST RECOVERY

90 A

Not Qualified

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

NXP SEMICONDUCTORS

O-LALF-W2

unknown

EAR99

8541.10.00.80

BYV28-150

Galaxy Semi-Conductor Co Ltd

Check for Price

Active

3.5 A

1.02 V

35 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

SUPER FAST RECOVERY

90 A

150 V

O-PALF-W2

DO-27

125 °C

-55 °C

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

WIRE

AXIAL

GALAXY SEMI-CONDUCTOR CO LTD

unknown

EAR99

8541.10.00.80

BYV28-150/21113

NXP Semiconductors

Check for Price

Obsolete

3.5 A

1.02 V

25 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

ULTRA FAST RECOVERY

90 A

Not Qualified

O-LALF-W2

175 °C

-65 °C

ISOLATED

GLASS

ROUND

LONG FORM

WIRE

AXIAL

NXP SEMICONDUCTORS

O-LALF-W2

unknown

EAR99

8541.10.00.80

BYV28-150Z

Galaxy Semi-Conductor Co Ltd

Check for Price

Yes

Active

3.5 A

1.02 V

25 ns

5 µA

SILICON

RECTIFIER DIODE

SINGLE

150 V

SUPER FAST RECOVERY

90 A

O-PALF-W2

DO-27

150 °C

-55 °C

260

ISOLATED

PLASTIC/EPOXY

ROUND

LONG FORM

WIRE

AXIAL

GALAXY SEMI-CONDUCTOR CO LTD

O-PALF-W2

unknown

EAR99

8541.10.00.80

BYV28-150-TR

Vishay Semiconductors

Check for Price

Yes

Active

3.5 A

890 mV

30 ns

SILICON

RECTIFIER DIODE

SINGLE

150 V

AVALANCHE

METALLURGICALLY BONDED

ULTRA FAST RECOVERY

90 A

Not Qualified

E-LALF-W2

175 °C

-55 °C

260

ISOLATED

GLASS

ELLIPTICAL

LONG FORM

TIN SILVER

WIRE

AXIAL

VISHAY SEMICONDUCTORS

E-LALF-W2

unknown

Vishay

EAR99

8541.10.00.80

BYV28-150

Microchip Technology Inc

Check for Price

Active

3.5 A

1.1 V

30 ns

1 µA

SILICON

RECTIFIER DIODE

SINGLE

EFFICIENCY

80 A

Not Qualified

O-LALF-W2

165 °C

-55 °C

ISOLATED

GLASS

ROUND

LONG FORM

TIN LEAD

WIRE

AXIAL

MICROCHIP TECHNOLOGY INC

compliant

BYV28-150AMO

Philips Semiconductors

Check for Price

Transferred

1.9 A

1.1 V

30 ns

RECTIFIER DIODE

SINGLE

150 V

GENERAL PURPOSE

90 A

175 °C

Tin/Lead (Sn80Pb20)

PHILIPS SEMICONDUCTORS

unknown

EAR99

1 2 3 4 5 Next