Parametric results for: CAT24C5121111 under EEPROMs
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CAT24C512WI-GT3
onsemi
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$0.5278 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 2 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | SOIC 8, 150 mils | SOIC-8 | 8 | 751BD | compliant | EAR99 | 8542.32.00.51 | onsemi | |||||
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CAT24C512YI-GT3
onsemi
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$0.7090 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 2 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | ONSEMI | TSSOP8, 4.4x3 | TSSOP-8 | 8 | 948AL | compliant | EAR99 | 8542.32.00.51 | onsemi | |||||
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CAT24C512LI-G
onsemi
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$0.9590 | Yes | Yes | Obsolete | 524.288 kbit | 8 | 64KX8 | 3.3 V | 400 kHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | NO | I2C | 2 µA | 2.5 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e4 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | NICKEL PALLADIUM GOLD | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | ONSEMI | DIP | PDIP-8 | 8 | 646AA | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||
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CAT24C512XI-T2
onsemi
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$1.0943 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 2 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 2.03 mm | 5.255 mm | 5.23 mm | ONSEMI | SOIC-8, 208 mils | SOIC-8 | 8 | 751BE | compliant | EAR99 | 8542.32.00.51 | onsemi | |||||
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CAT24C512WI-G
onsemi
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$1.2104 | Yes | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 1 MHz | EEPROM | ALSO OPERATES WITH 1.8V MIN AT 4 KHZ | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 2 µA | 2.5 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | SOIC-8 | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||
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CAT24C512HU5IGT3
onsemi
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$1.2941 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 400 kHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | R-PDSO-N8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | 500 µm | DUAL | 550 µm | 3 mm | 2 mm | ONSEMI | UDFN8, 2x3, 0.5P, Extended Pad | UDFN-8 | 8 | 517BU | compliant | EAR99 | 8542.32.00.51 | onsemi | |||||||||||
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CAT24C512HU5E-GT3
onsemi
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Check for Price | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 1 MHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | R-PDSO-N8 | Not Qualified | e4 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | VSON | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 550 µm | 3 mm | 2 mm | ON SEMICONDUCTOR | DFN | VSON, | 8 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||
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CAT24C512XE-T2
onsemi
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Check for Price | Yes | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 1 MHz | EEPROM | 100 YEAR DATA RETENTION | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | NO | I2C | 5 µA | 2.5 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 3 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.03 mm | 5.255 mm | 5.23 mm | ONSEMI | SOIC | 0.208 MM, HALOGEN FREE AND ROHS COMPLIANT, EDR-7320, SOIC-8 | 8 | 751BE | compliant | EAR99 | 8542.32.00.51 | |||
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CAT24C512YI-G
onsemi
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Check for Price | Yes | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 1 MHz | EEPROM | ALSO OPERATES WITH 1.8V MIN AT 4 KHZ | 100 | 1000000 Write/Erase Cycles | 1010DDDR | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 2 µA | 2.5 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | ONSEMI | TSSOP-8 | compliant | EAR99 | 8542.32.00.51 | onsemi | ||||||||
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CAT24C512C8ATR
onsemi
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Check for Price | Yes | Active | 524.288 kbit | 8 | 64KX8 | 3.3 V | 400 kHz | EEPROM | 1 | 64000 | 65.536 k | SYNCHRONOUS | SERIAL | I2C | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | R-PBGA-B8 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 500 µm | BOTTOM | 600 µm | 1.65 mm | 1.39 mm | ONSEMI | WLCSP-8 | compliant | EAR99 | 8542.32.00.51 |