Findchips: Parametric Search Results for CAT28C64BNI-12T


Select Parts		Part Number

		CAT28C64BNI-12TE7 onsemi
		CAT28C64BNI-12TE13 Catalyst Semiconductor
		CAT28C64BNI-12T onsemi
		CAT28C64BNI-12TE13 onsemi
		CAT28C64BNI-12T Rochester Electronics LLC
		CAT28C64BNI-12TE7 Catalyst Semiconductor
		CAT28C64BNI-12T Catalyst Semiconductor

				Most Relevant					Technical																						Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Command User Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Page Size	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Write Cycle Time-Max (tWC)	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

25 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

compliant

EAR99

8542.32.00.51

Check for Price

Transferred

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ,

unknown

EAR99

8542.32.00.51

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

120 ns

EEPROM

YES

100000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

32 words

PARALLEL

5 V

100 µA

30 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

YES

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

235

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.965 mm

11.425 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

not_compliant

EAR99

8542.32.00.51

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

25 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

compliant

EAR99

8542.32.00.51

Check for Price

Contact Manufacturer

65.536 kbit

8KX8

5 V

120 ns

EEPROM

100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

100

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.965 mm

11.425 mm

ROCHESTER ELECTRONICS LLC

QFJ

PLASTIC, LCC-32

unknown

EAR99

8542.32.00.51

Check for Price

Transferred

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ,

unknown

EAR99

8542.32.00.51

Check for Price

Transferred

65.536 kbit

8KX8

5 V

120 ns

EEPROM

100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

YES

100

1000000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

32 words

PARALLEL

5 V

100 µA

30 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

YES

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

240

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

3.55 mm

13.965 mm

11.425 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ, LDCC32,.5X.6

unknown

EAR99

8542.32.00.51

Compare

CAT28C64BNI-12TE7

onsemi

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

25 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

compliant

EAR99

8542.32.00.51

CAT28C64BNI-12TE13

Catalyst Semiconductor

Check for Price

Transferred

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ,

unknown

EAR99

8542.32.00.51

CAT28C64BNI-12T

onsemi

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

120 ns

EEPROM

YES

100000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

32 words

PARALLEL

5 V

100 µA

30 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

YES

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

235

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.965 mm

11.425 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

not_compliant

EAR99

8542.32.00.51

CAT28C64BNI-12TE13

onsemi

Check for Price

Obsolete

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

25 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

compliant

EAR99

8542.32.00.51

CAT28C64BNI-12T

Rochester Electronics LLC

Check for Price

Contact Manufacturer

65.536 kbit

8KX8

5 V

120 ns

EEPROM

100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

100

8000

8.192 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

INDUSTRIAL

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.965 mm

11.425 mm

ROCHESTER ELECTRONICS LLC

QFJ

PLASTIC, LCC-32

unknown

EAR99

8542.32.00.51

CAT28C64BNI-12TE7

Catalyst Semiconductor

Check for Price

Transferred

65.536 kbit

8KX8

5 V

120 ns

EEPROM

8000

8.192 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

5.5 V

4.5 V

CMOS

INDUSTRIAL

R-PQCC-J32

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

YES

TIN LEAD

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ,

unknown

EAR99

8542.32.00.51

CAT28C64BNI-12T

Catalyst Semiconductor

Check for Price

Transferred

65.536 kbit

8KX8

5 V

120 ns

EEPROM

100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

YES

100

1000000 Write/Erase Cycles

8000

8.192 k

ASYNCHRONOUS

32 words

PARALLEL

5 V

100 µA

30 µA

5.5 V

4.5 V

CMOS

INDUSTRIAL

YES

5 ms

R-PQCC-J32

Not Qualified

85 °C

-40 °C

240

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

3.55 mm

13.965 mm

11.425 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ, LDCC32,.5X.6

unknown

EAR99

8542.32.00.51

Parametric results for: CAT28C64BNI-12T under EEPROMs