Findchips.com

Register or Sign In

Parametric » Memory » Flash Memories

Parametric results for: CAT28F020NA-90T under Flash Memories

Select parts from the table below to compare.

Compare


Select Parts		Part Number

		CAT28F020NA-90T onsemi
		CAT28F020NA-90T Catalyst Semiconductor

			Most Relevant					Technical																				Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Command User Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

No

Obsolete

2.0972 Mbit

8

256KX8

5 V

90 ns

FLASH

YES

NO

100000 Write/Erase Cycles

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

12 V

100 µA

30 µA

5.5 V

4.75 V

CMOS

INDUSTRIAL

NO

NOR TYPE

R-PQCC-J32

Not Qualified

1

105 °C

-40 °C

32

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

32

unknown

EAR99

8542.32.00.51

Check for Price

No

Transferred

2.0972 Mbit

8

256KX8

5 V

90 ns

FLASH

100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION

YES

NO

10

100000 Write/Erase Cycles

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

12 V

10 µA

30 µA

5.5 V

4.75 V

CMOS

INDUSTRIAL

NO

NOR TYPE

R-PQCC-J32

Not Qualified

e0

3

105 °C

-40 °C

240

30

32

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ, LDCC32,.5X.6

32

unknown

EAR99

8542.32.00.51

Compare

CAT28F020NA-90T

onsemi

Check for Price

No

Obsolete

2.0972 Mbit

8

256KX8

5 V

90 ns

FLASH

YES

NO

100000 Write/Erase Cycles

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

12 V

100 µA

30 µA

5.5 V

4.75 V

CMOS

INDUSTRIAL

NO

NOR TYPE

R-PQCC-J32

Not Qualified

1

105 °C

-40 °C

32

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

ON SEMICONDUCTOR

QFJ

PLASTIC, LCC-32

32

unknown

EAR99

8542.32.00.51

CAT28F020NA-90T

Catalyst Semiconductor

Check for Price

No

Transferred

2.0972 Mbit

8

256KX8

5 V

90 ns

FLASH

100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION

YES

NO

10

100000 Write/Erase Cycles

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

12 V

10 µA

30 µA

5.5 V

4.75 V

CMOS

INDUSTRIAL

NO

NOR TYPE

R-PQCC-J32

Not Qualified

e0

3

105 °C

-40 °C

240

30

32

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

YES

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

3.55 mm

13.97 mm

11.43 mm

CATALYST SEMICONDUCTOR INC

QFJ

QCCJ, LDCC32,.5X.6

32

unknown

EAR99

8542.32.00.51