Parametric results for: CY14B116N-Z45XI under SRAMs

All Filters Access Time-Max JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

45 ns 4

4 hits Apply

R-PDSO-G48 4

4 hits Apply

e3 2

4 hits Apply

18.4 mm 4

4 hits Apply

Manufacturer (2)

Cypress Semiconductor 2 Infineon Technologies AG 2

4 hits Apply

Memory Density (1)

16.7772 Mbit 4

4 hits Apply

NON-VOLATILE SRAM 4

4 hits Apply

Memory Width (1)

16 4

4 hits Apply

3 4

4 hits Apply

1.0 4

4 hits Apply

48 4

4 hits Apply

1.0486 M 4

4 hits Apply

1000000.0 4

4 hits Apply

ASYNCHRONOUS 4

4 hits Apply

85.0 °C 4

4 hits Apply

-40.0 °C 4

4 hits Apply

Organization (1)

1MX16 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

TSOP1 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE, THIN PROFILE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 4

4 hits Apply