Parametric results for: CY7C1009BN-12VC under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

12 ns 4

4 hits Apply

COMMON 1

4 hits Apply

R-PDSO-J32 4

4 hits Apply

e0 4

4 hits Apply

17.907 mm 4

4 hits Apply

Manufacturer (2)

Cypress Semiconductor 2 Rochester Electronics LLC 2

4 hits Apply

Memory Density (1)

1.0486 Mbit 4

4 hits Apply

STANDARD SRAM 4

4 hits Apply

Memory Width (1)

8 4

4 hits Apply

1 2

4 hits Apply

1.0 4

4 hits Apply

32 4

4 hits Apply

131.072 k 4

4 hits Apply

128000.0 4

4 hits Apply

ASYNCHRONOUS 4

4 hits Apply

70.0 °C 4

4 hits Apply

0.0 °C 4

4 hits Apply

Organization (1)

128KX8 4

4 hits Apply

3-STATE 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

SOJ 4

4 hits Apply

SOJ32,.34 1

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 4

4 hits Apply