Parametric results for: CY7C1061G30-10ZSXIT under SRAMs

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 2

2 hits Apply

R-PDSO-G54 2

2 hits Apply

22.415 mm 2

2 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Infineon Technologies AG 1

2 hits Apply

Memory Density (1)

16.7772 Mbit 2

2 hits Apply

STANDARD SRAM 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

3 2

2 hits Apply

1.0 2

2 hits Apply

54 2

2 hits Apply

1.0486 M 2

2 hits Apply

1000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

1MX16 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP2 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 2

2 hits Apply