Parametric results for: CY7C1314BV18-200BZC under SRAMs

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

450 ps 2

2 hits Apply

PIPELINED ARCHITECTURE 2

2 hits Apply

Clock Frequency-Max (fCLK) (1)

200 MHz 1

2 hits Apply

SEPARATE 1

2 hits Apply

R-PBGA-B165 2

2 hits Apply

e0 2

2 hits Apply

15 mm 2

2 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Rochester Electronics LLC 1

2 hits Apply

Memory Density (1)

18.8744 Mbit 2

2 hits Apply

QDR SRAM 2

2 hits Apply

Memory Width (1)

36 2

2 hits Apply

3 2

2 hits Apply

1.0 2

2 hits Apply

165 2

2 hits Apply

524.288 k 2

2 hits Apply

512000.0 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

512KX36 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

LBGA 2

2 hits Apply

BGA165,11X15,40 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

GRID ARRAY, LOW PROFILE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 2

2 hits Apply