Parametric results for: CY7C1510V18-300BZI under SRAMs

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

450 ps 1

1 hit Apply

PIPELINED ARCHITECTURE 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

300 MHz 1

1 hit Apply

SEPARATE 1

1 hit Apply

R-PBGA-B165 1

1 hit Apply

e0 1

1 hit Apply

17 mm 1

1 hit Apply

Manufacturer (1)

Cypress Semiconductor 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

QDR SRAM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

3 1

1 hit Apply

1.0 1

1 hit Apply

165 1

1 hit Apply

8.3886 M 1

1 hit Apply

8000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

8MX8 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

LBGA 1

1 hit Apply

BGA165,11X15,40 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, LOW PROFILE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply