Parametric results for: EM658160TS-4 under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Access Time-Max (1)

600 ps 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

250 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

2,4,8 1

1 hit Apply

R-PDSO-G66 1

1 hit Apply

Manufacturer (1)

Etron Technology Inc 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

DDR1 DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

66 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

4MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSSOP 1

1 hit Apply

TSSOP66,.46 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply