Parametric results for: ES29LV400E under Flash Memories

All Filters Access Time-Max Alternate Memory Width Boot Block Command User Interface Data Polling Endurance JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Access Time-Max (2)

70 ns 16 90 ns 16

Min (ns) - Max (ns)

32 hits Apply

8 32

32 hits Apply

BOTTOM 16 TOP 16

32 hits Apply

YES 32

32 hits Apply

YES 32

32 hits Apply

100000.0 Write/Erase Cycles 32

32 hits Apply

R-PBGA-B48 16 R-PDSO-G48 8 R-PDSO-G56 8

32 hits Apply

Manufacturer (1)

Excel (Suzhou) Semiconductor Co Ltd 32

32 hits Apply

Memory Density (1)

4.1943 Mbit 32

32 hits Apply

FLASH 32

32 hits Apply

Memory Width (1)

16 32

32 hits Apply

3 16

32 hits Apply

1,2,1,7 32

32 hits Apply

48 24 56 8

32 hits Apply

262.144 k 32

32 hits Apply

256000.0 32

32 hits Apply

70.0 °C 16 85.0 °C 16

Min (°C) - Max (°C)

32 hits Apply

-40.0 °C 16 0.0 °C 16

Min (°C) - Max (°C)

32 hits Apply

Organization (1)

256KX16 32

32 hits Apply

PLASTIC/EPOXY 32

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FBGA 16 TSSOP 16

32 hits Apply

BGA48,6X8,32 16 TSSOP48,.8,20 8 TSSOP56,.8,20 8

32 hits Apply

RECTANGULAR 32

32 hits Apply

GRID ARRAY, FINE PITCH 16 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 16

32 hits Apply

Sector Size (1)

16K,8K,32K,64K 32

32 hits Apply